PIB-2012-SAC

Synthesis and Characterization of Pb(Zr,Ti)O3-Pb(Nb,Zn)O3 Thin Film Cantilevers for Energy Harvesting Applications

E. Fuentes-Hernandez, M. A. Quevedo-Lopez, E.L. Salguero, P. Shah, B.E. Gnade, and H.N. Alshareef, “Synthesis and Characterization of Pb(Zr,Ti)O3-Pb(Nb,Zn)O3 Thin Film Cantilevers for Energy Harvesting Applications”
Smart Materials Research
Volume 2012 (2012), Article ID 872439, 9 pages
E. Fuentes-Hernandez, M. A. Quevedo-Lopez, E.L. Salguero, P. Shah, B.E. Gnade, and H.N. Alshareef
Thin Film, Energy Harvesting
2012
​A complete analysis of the morphology, crystallographic orientation, and resulting electrical properties of Pb(Zr0.53,Ti0.47) Pb(Nb1/3, Zn2/3)O3 (PZT-PZN) thin films, as well as the electrical behavior when integrated in a cantilever for energy harvesting applications, is presented. The PZT-PZN films were deposited using sol-gel methods. We report that using 20% excess Pb, a nucleation layer of PbTiO3 (PT), and a fast ramp rate provides large grains, as well as denser films. The PZT-PZN is deposited on a stack of TiO2/PECVD SiO2/Si3N4/thermal SiO2/Poly-Si/Si. This stack is designed to allow wet-etching the poly-Si layer to release the cantilever structures. It was also found that the introduction of the poly-Si layer results in larger grains in the PZT-PZN film. PZT-PZN films with a dielectric constant of 3200 and maximum polarization of 30 μC/cm2 were obtained. The fabricated cantilever devices produced ~300–400 mV peak-to-peak depending on the cantilever design. Experimental results are compared with simulations.