PUB-2013-EOT

Enhancement of the p-type mobility in tin monoxide by native defects

D.B. Granato, J. A. Caraveo-Frescas, H.N. Alshareef, and U. Schwingenschlogl, “Enhancement of the p-type mobility in tin monoxide by native defects”
Appl. Phys. Lett. 102, 212105 (2013)
D.B. Granato, J. A. Caraveo-Frescas, H.N. Alshareef, and U. Schwingenschlogl
Tin monoxide, Native defects
2013
Transparent p-type materials with good mobility are needed to build completely transparent p-n junctions. Tin monoxide (SnO) is a promising candidate. A recent study indicates great enhancement of the hole mobility of SnO grown in Sn-rich environment [E. Fortunato , Appl. Phys. Lett. , 052105 (2010)]. Because such an environment makes the formation of defects very likely, we study defect effects on the electronic structure to explain the increased mobility.We find that Sn interstitials and O vacancies modify the valence band, inducing higher contributions of the delocalized Sn 5 orbitals as compared to the localized O 2 orbitals, thus increasing the mobility. This mechanism of valence band modification paves the way to a systematic improvement of transparent p-type semiconductors.