PUB-2013-FAC

Fabrication and Characterization of High-Mobility Solution-Based Chalcogenide Thin-Film Devices Transistors

I Mejia, A.L. Villasenor, Dongkyu Cha, H.N. Alshareef, B. E. Gnade, and Manuel A. Quevedo, “Fabrication and Characterization of High-Mobility Solution-Based Chalcogenide Thin-Film Devices Transistors”
I Mejia, A.L. Villasenor, Dongkyu Cha, H.N. Alshareef, B. E. Gnade, and Manuel A. Quevedo
Chalcogenide Thin-Film, High-Mobility, Transistors
2013
We report device and material considerations for the fabrication of high-mobility thin-film transistors (TFTs) compatible with large-area and inexpensive processes. In particular, this paper reports photolithographically defined n-type TFTs (n-TFTs) based on cadmium sulfide (CdS) films deposited using solution-based techniques. The integration process consists of four mask levels with a maximum processing temperature of 100 ◦C. The TFT performance was analyzed in terms of the CdS semiconductor thickness and as a function of postdeposition annealing in a reducing ambient. The Ion/Ioff ratios are ∼107 with field-effect mobilities of ∼5.3 and ∼4.7 cm2/V · s for Al and Au source–drain contacts, respectively, using 70 nm of CdS. Transmission electron microscopy and electron energy loss spectroscopy were used to analyze the CdS–metal interfaces.