PUB-2013-HPI

High performance In2O3 thin film transistors using chemically-derived aluminum oxide dielectric

Pradipta K. Nayak, M. N. Hedhili, Dongkyu Cha, and H.N. Alshareef, “High performance In2O3 thin film transistors using chemically-derived aluminum oxide dielectric”
Appl. Phys. Lett. 103, 033518 (2013)
Pradipta K. Nayak, M. N. Hedhili, Dongkyu Cha, and H.N. Alshareef
In2O3, Thin film transistors
2013
We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm/Vs and an I/I ratio of 10. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOthin-filmdielectrics. The AlO films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlO surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.