PUB-2013-ISG

In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition

S.R.S Kumar, P. Nayak, MN Hedhili, and H.N. Alshareef, “In situ growth of p and n-type graphene thin films and diodes by pulsed laser deposition”
Appl. Phys. Lett. 103, 192109 (2013)
S.R.S Kumar, P. Nayak, MN Hedhili, and H.N. Alshareef
graphene thin films, pulsed laser deposition
2013
We report the  growth of p and n-type graphene thin films by ultraviolet pulsed laser deposition in the presence of argon and nitrogen, respectively. Electron microscopy and Raman studies confirmed the growth, while temperature dependent electrical conductivity and Seebeck coefficient studies confirmed the polarity type of graphene films. Nitrogen doping at different sites of the honeycomb structure, responsible for n-type conduction, is identified using X-ray photoelectron spectroscopy, for films grown in nitrogen. A diode-like rectifying behavior is exhibited by p-n junction diodes fabricated using the graphene films.