PUB-2013-MFS

Metal-free, single-polymer device exhibits resistive memory effect

U. Bhansali, M.A. Khan, Dongkyu Cha, Ruipeng Li, Long Chen, Aram Amassian, Ihab N. Odeh, and H.N. Alshareef, “Metal-free, single-polymer device exhibits resistive memory effect”
ACS Nano, 20137 (12), pp 10518–10524
U. Bhansali, M.A. Khan, Dongkyu Cha, Ruipeng Li, Long Chen, Aram Amassian, Ihab N. Odeh, and H.N. Alshareef
PEDOT:PSS; resistive memory; flexible substrates; polymer electrodes; metal filament; solution process
2013
All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal–PEDOT:PSS–metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>103), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months).