PUB-2013-PTC

P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

H.A. Al-Jawhari, J.A. Caraveo-Frescas, and H.N. Alshareef, “P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures”
ACS Appl. Mater. Interfaces, 20135 (19), pp 9615–9619
H.A. Al-Jawhari, J.A. Caraveo-Frescas, and H.N. Alshareef
thin film transistor; tin monoxide; cuprous oxide; bilayer channel; oxide semiconductors
2013
P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 °C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V–1 s–1, 1.5×102, and −5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed.