PUB-2013-TPT

Transparent p-type Oxide Nanowires with Unprecedented Hole Mobility Among Oxide Semiconductors

J.A. Caraveo-Frescas and H.N. Alshareef, “Transparent p-type Oxide Nanowires with Unprecedented Hole Mobility Among Oxide Semiconductors”
Appl. Phys. Lett. 103, 222103 (2013)
J.A. Caraveo-Frescas and H.N. Alshareef
p-type Oxide Nanowires, Hole Mobility
2013
p-type tin monoxide (SnO) nanowire field-effect transistors with stable enhancement mode behavior and record performance are demonstrated at 160 °C. The nanowire transistors exhibit the highest field-effect hole mobility (10.83 cm2 V−1 s−1) of any p-type oxide semiconductor processed at similar temperature. Compared to thin film transistors, the SnO nanowire transistorsexhibit five times higher mobility and one order of magnitude lower subthreshold swing. The SnOnanowire transistors show three times lower threshold voltages (−1 V) than the best reported SnOthin film transistors and fifteen times smaller than p-type Cu nanowire transistors.Gatedielectric and process temperature are critical to achieving such performance.