PUB-2014-EFR

Electroforming-free resistive switching memory effect in transparent p-type tin monoxide

M. K.  Hota, J. A. Caraveo-Frescas, M. A. McLachlan, and H.N. Alshareef, “Electroforming-free resistive switching memory effect in transparent p-type tin monoxide”
Appl. Phys. Lett. 104, 152104 (2014)
M. K. Hota, J. A. Caraveo-Frescas, M. A. McLachlan, and H.N. Alshareef
p-type tin monoxide, memory effect
2014
We report reproducible low bias bipolar resistive switching behavior in -type SnO thin film devices without extra electroforming steps. The experimental results show a stable resistanceratio of more than 100 times, switching cycling performance up to 180 cycles, and data retention of more than 103 s. The conduction mechanism varied depending on the applied voltage range and resistance state of the device. The memristive switching is shown to originate from a redox phenomenon at the Al/SnO interface, and subsequent formation/rupture of conducting filaments in the bulk of the SnO layer, likely involving oxygen vacancies and Sn interstitials.