Fabrication of Reaxor Based Piezoelectric Energy Harvester using Sacrificial Poly-Si Layer

Fabrication of Reaxor Based Piezoelectric Energy Harvester using Sacrificial Poly-Si Layer

E. Fuentez, M. Quevedo-Lopez, P. Shah, B. E. Gnade, and H.N. Alshareef, “Fabrication of Reaxor Based Piezoelectric Energy Harvester using Sacrificial Poly-Si Layer​​
Journal of Electronic Materials
November 2014Volume 43Issue 11pp 3898-3904
E. Fuentez, M. Quevedo-Lopez, P. Shah, B. E. Gnade, and H.N. Alshareef
Energy harvesting, piezoelectric, relaxor, perovskite, cantilever, integration
2014
​The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3–Pb(Zn1/3,Nb2/3)O3 (PZT–PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 lW/cm2
.