PUB-2014-HDG

Hybrid Dual Gate p-type Ferroelectric Memory for Multilevel Information Storage

M.A. Khan, J.A. Caraveo-Frescas, and H.N. Alshareef “Hybrid Dual Gate p-type Ferroelectric Memory for Multilevel Information Storage”
Organic Electronics
Volume 16, January 2015, Pages 9–17
M.A. Khan, J.A. Caraveo-Frescas, and H.N. Alshareef
Ferroelectric, Memory Dual gate, Tin monoxide, p-type semiconductor
2014
​Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (200 C), and ​demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of 18 V, and a low sub-threshold swing 4 V dec1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.