PUB-2014-PFF

Polymer Ferroelectric Field-Effect Memory Device with p-Channel Oxide Semiconductor Exhibits Record Hole Mobility

J.A. Caraveo-Frescas, M.A. Khan, and H.N. Alshareef “Polymer Ferroelectric Field-Effect Memory Device with p-Channel Oxide Semiconductor Exhibits Record Hole Mobility”
Scientific Reports
 
4,
 
Article number:
 
5243
J.A. Caraveo-Frescas, M.A. Khan, and H.N. Alshareef
p-Channel Oxide Semiconductor, Hole Mobility, Polymer
2014
Here we report for the first time a hybrid p-channel polymer ferroelectric field-effect transistor memory device with record mobility. The memory device, fabricated at 200°C on both plastic polyimide and glass substrates, uses ferroelectric polymer P(VDF-TrFE) as the gate dielectric and transparent p-type oxide (SnO) as the active channel layer. A record mobility of 3.3 cm2V−1s−1, large memory window (~16 V), low read voltages (~−1 V), and excellent retention characteristics up to 5000 sec have been achieved. The mobility achieved in our devices is over 10 times higher than previously reported polymer ferroelectric field-effect transistor memory with p-type channel. This demonstration opens the door for the development of non-volatile memory devices based on dual channel for emerging transparent and flexible electronic devices.