PUB-2014-TFC

Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer

P. Nayak, A. Caraveo, M.H. Hehili, and ZW Wang, H.N. Alshareef, “Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer”
Scientific Reports
 
4,
 
Article number:
 
4672
P. Nayak, A. Caraveo, M.H. Hehili, and ZW Wang, H.N. Alshareef
CMOS, Single-step deposition
2014
We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. The semiconducting tin oxide layer was deposited at room temperature, and the maximum device fabrication temperature was 350°C. Both n and p-type TFTs showed fairly comparable performance. A functional CMOS inverter was fabricated using this novel scheme, indicating the potential use of our approach for various practical applications.