PUB-2015-EFR

Electroforming free resistive switching memory in two-dimensional VOx nanosheets

MK Hota, DH Nagaraju, MN Hedhili, HN Alshareef, "Electroforming free resistive switching memory in two-dimensional VOx nanosheets"
Appl. Phys. Lett. 107, 163106 (2015)​
MK Hota, DH Nagaraju, MN Hedhili, HN Alshareef
VOx, resistive switching
2015
We report two-dimensional VO nanosheets containing multi-oxidation states (V5+, V4+, and V3+), prepared by a hydrothermal process for potential applications in resistiveswitchingdevices. The experimental results demonstrate a highly reproducible, electroforming-free, low SET bias bipolar resistive switching memory performance with endurance for more than 100 cycles maintaining OFF/ON ratio of ∼60 times. These devices show better memory performance as compared to previously reported VO thin film based devices. The memory mechanism in VO is proposed to be originated from the migration of oxygen vacancies/ions, an influence of the bottom electrode and existence of multi-oxidation states.