PUB-2015-HDG

Hybrid dual gate ferroelectric memory for multilevel information storage

M.A. Khan, J.A. Caraveo-Frescas, H.N. Alshareef, "Hybrid dual gate ferroelectric memory for multilevel information storage​"
Organic Electronics,Volume 16, January 2015, Pages 9–17
M.A. Khan, J.A. Caraveo-Frescas, H.N. Alshareef
Ferroelectric; Memory; Dual gate; Tin monoxide; p-type semiconductor
2015
​Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (200 C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V1 s 1 , large memory window of 18 V, and a low sub-threshold swing 4 V dec1 . The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.