PUB-2015-HST

Highly stable thin film transistors using multilayer channel structure

Pradipta K Nayak, Zhenwei Wang, DH Anjum, MN Hedhili, HN Alshareef, "Highly stable thin film transistors using multilayer channel structure"
​​Appl. Phys. Lett. 106, 103505 (2015)​
Pradipta K Nayak, Zhenwei Wang, DH Anjum, MN Hedhili, HN Alshareef
Thin film transistors, Multilayers
2015
We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zincoxide (ZnO)/hafnium oxide (HfOmultilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60 °C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.