PUB-2015-SFM

Six-Fold Mobility Improvement of Indium-Zinc Oxide Thin-Film Transistors Using a Simple Water Treatment

Pradipta K. Nayak, Jesus A. Caraveo-Frescas, Zhenwei Wang, Mohamed N. Hedhili andHusam N. Alshareef*, "Six-Fold Mobility Improvement of Indium-Zinc Oxide Thin-Film Transistors Using a Simple Water Treatment"
Advanced Electronic Materials. doi: 10.1002/aelm.201500014​
Pradipta K. Nayak, Jesus A. Caraveo-Frescas, Zhenwei Wang, Mohamed N. Hedhili andHusam N. Alshareef*
high mobility;indium zinc oxide;thin film transistors;water treatment
2015
In the present work, we report a simple method to fabricate TFTs with six-fold increased μFE using photolithographically patterned IZO channel layer and aluminum oxide gate dielectric, both prepared by spin coating technique at low processing temperature (250–300 °C). A simple de-ionized water (DIW) treatment prior to final crystallization annealing of IZO films was found to significantly boost the μFE. TFTs with patterned DIW-treated IZO channel layers showed a maximum peak μFE of ca. 51 ± 5 cm2 V−1 s−1.