PUB-2016-HVD

Hybrid van der Waals p–n Heterojunctions based on SnO and 2D MoS2

​Zhenwei Wang, Xin He, Xi-Xiang Zhang, Husam N. Alshareef; "Hybrid van der Waals p–n Heterojunctions based on SnO and 2D MoS2​"
​Adv. Mater. 2016,  DOI: 10.1002/adma.201602157
Zhenwei Wang, Xin He, Xi-Xiang Zhang, Husam N. Alshareef
p-n junction
2016
​A p-type oxide/2D hybrid van der Waals p–n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 104. The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.