PUB-2016-IFF

Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition

P Nayak, Z Wang, HN Alshareef ,"Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition"
​Adv. Mater. 2016, DOI: 10.1002/adma.201600503
P Nayak, Z Wang, HN Alshareef
Indium-Free, Transparent, Atomic Layer Deposition
2016
​The field of transparent electronics based on metal oxide conductors and semiconductors has attracted much attention in recent years[1–4] because it is expected that fabrication of fully transparent devices will not only enable higher performance displays, but will also usher in a new era of transparent electronics. For example, high resolution see-through displays, fast electrochromic windows, transparent sensors for security applications all can be realized if truly fully transparent devices and circuits can be fabricated.[5] In the past decade, a considerable amount of research has been done to improve the performance of thin film transistors (TFTs) based on transparent oxide semiconductors (TOS).[6–13] Electronic circuits using oxide TFTs or diodes have also been reported recently.[2,3,14–25] However, most of these studies have used transparent oxides only for the semiconductor and dielectric layers. In fact, nontransparent (opaque) metals have been mostly used for source–drain (SD) contacts, which significantly reduced device transparency.[2] On the other hand, the limited work on truly fully transparent circuits has almost exclusively relied on indium tin oxide (ITO), indium doped zinc oxide (IZO) or other indium-containing oxides to fabricate the transparent gates.