PUB-2016-NFP

Novel Ferroelectric Polymer Memory Coupling Two Identical Thin‐Film Transistors

Ji Hoon Park, Pradipta K. Nayak, Husam N. Alshareef, "Novel Ferroelectric Polymer Memory Coupling Two Identical Thin‐Film Transistors"
​Adv. Electron. Mater. 2016, 2, 1500206​
Ji Hoon Park, Pradipta K. Nayak, Husam N. Alshareef
ferroelectric, polymer
2016
A novel ferroelectric memory cell is proposed by coupling two identical organic thin-film transistors. This cell takes advantage of the high coercive field of the organic polymer (E c > 50 MV m−1) to change the transistor function. The drive and memory thin-film transistor operation is achieved by applying a gate voltage, below or above E c of the ferroelectric material, respectively.