Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics

"Mrinal K. Hota, Fwzah H. Alshammari, Khaled N. Salama, and Husam N. Alshareef" Transparent Flash Memory Using Single Ta2O5 Layer for Both Charge-Trapping and Tunneling Dielectrics​
​ACS Appl. Mater. Interfaces 2017, 9, 21856−21863​
Mrinal K. Hota, Fwzah H. Alshammari, Khaled N. Salama, and Husam N. Alshareef
charge trapping flash memory, multibit memory, non-volatile memory, TFT, Ta2O5
We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ∼10.7 V. Moreover, the flash memory device shows a stable 2-bit memory performance and good reliability, including data retention for more than 104 s and endurance performance for more than 100 cycles. The use of a common charge-trapping and tunneling layer can simplify the fabrication of advanced flash memories.