Publications Before 2011

List of Peer-Reviewed Publications  ( ** denotes KAUST affiliation)

2012 (** Denotes KAUST Affiiliation)

54.   **R.B. Rakhi, Wei Chen, Dongkyu Cha, and H.N. Alshareef, “Substrate Dependent Self-Organization of Mesoporous Co3O¬4 Nanowires with Remarkable Pseudocapacitance”, Nano Letters 12, 2559 (2012).

55.   **R.B. Rakhi, W. Chen, D.K. Cha, and H.N. Alshareef, “Nanostructured Ternary Electrodes for Energy Storage Applications”, Advanced Energy Materials 2, (3), 381(2012).

56.   **M. Almadhoun, U. Bhansali, and H.N. Alshareef, “Nanocomposites of ferroelectric polymer and surface-hydroxylated BaTiO3 nanoparticles for energy storage applications”, Journal of Materials Chemistry 22, 11196-11200 (2012).

57.   **Wei Chen, R.B. Rakhi, and H.N. Alshareef, “High Energy Density Supercapacitors Using Macroporous Kitchen Sponges”, Journal of Materials Chemistry 22, 14394 (2012)

58.   **S.R.S Kumar, A.I. Abutaha, M. N. Hedhili, and H.N. Alshareef, “Electron effective mass tuning in La-doped SrTiO3 epitaxial thermoelectric thin films”, Journal of Applied Physics 112, 114104 (2012).

59.   **M. A. Khan, U. Bhansali, and H.N. Alshareef, “High performance ferroelectric memory devices on banknotes”, Advanced Materials 24, 16, 2165(2012).

60.   **A.I. Abutaha, S.R.S Kumar, and H.N. Alshareef, “Laser energy tuning of the effective mass and thermopower of epitaxial oxide thin films”, Applied Physics Letters 100, 162106 (2012).

61.   **P. Nayak, M.N. Hedhili, Dongkyu Cha, and H.N. Alshareef, “High Performance Indium Gallium Zinc Oxide Thin Film Transistors by Plasma Treatment”, Applied Physics Letters 100, 202106 (2012).

62.   **K. Ozdogan, M. Upadhyay Kahaly, H. N. Alshareef, and Udo Schwingenschlogl, “Anomalous enhancement of the thermoelectric figure of merit by V co-doping of Nb-SrTiO3”, Applied Physics Letters 100, 193110 (2012).

63.   **A. Fihri, R. Rahal, R. B. Rakhy, R. Sougrat, D. Cha, M. N. Hedhili, H. N. Alshareef, and V. Polshettiwar, “Nano-Roses of Nickel Oxides: Synthesis, Electron Tomography Study and Their Application for CO Oxidation and Energy Storage”, ChemSusChem  5, 10(2012).

64.   **Xing Xie, Meng Ye, Liangbing Hu, Nian Liu, James R. McDonough, Wei Chen, H. N. Alshareef, Craig S. Criddle and Yi Cui, “Carbon Nanotube on Macroporous Sponge for Microbial Fuel Cells”,  Energy & Environmental Science  5, 5265 (2012).

65.   **U. Bhansali, M. A. Khan, and H.N. Alshareef, “Optimization of the electric properties of polymer ferroelectric devices with transparent electrodes on flexible substrates”, Organic Electronics 13 (9) 1541(2012).

66.   **A.J. Caraveo-Frescas, H. Wang, U. Schwingenschlogl, and H. N. Alshareef, “Experimental and Theoretical Investigation of the Effect of SiO2 Content in Gate Dielectrics on Work Function Shift Induced by Nanoscale Capping Layers”, Applied Physics Letters 101, 112902 (2012).

67.   **P. Nayak and H.N. Alshareef, “First demonstration of a homojunction ferroelectric field effect transistor”, Applied Physics Letters 100, 253507 (2012).

68.   **C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef et al, “Interface Composition Controlled TiN/HfO2 Band Edge Effective Work Functions for Gate-Last CMOS with Low Vt”, Applied Physics Letters 100, 153501 (2012).

69.   **Y. Yao, L. Chen, Z. Wang, H.N. Alshareef, and X. Zhang, “Electrical and piezoelectric properties of BiFeO3 thin films grown on SrxCa1-xRuO3-buffered SrTiO3 substrates”, Journal of Applied Physics 111, 114102 (2012).

70.   **J. Li, C. Zhao, Q. Wang, Q. Zhang, Z. Wang, X. Zhang, A.I. Abutaha, H.N. Alshareef, “Vertical Carbon Nanotube Field-Effect Transistors”, Carbon 50, (12), 4628 (2012).

71.   **K. Ozdogan, M. U. Kahaly, S.R. Kumar, H.N. Alshareef, U. Schwingenschlogl, “Enhanced Carrier Density in Nb-doped SrTiO3 Thermoelectrics”, Journal of Applied Physics 111, 054313(2012).

72.   **Mahmoud Al Ahmad, A. M. Elshurafa, K. N. Salama, and H. N. Alshareef, “Determination of Maximum Power Transfer Conditions of Bimorph Piezoelectric Energy Harvesters”, Journal of Applied Physics 111, 102812 (2012).

73.   **A. Caraveo-Frescas, M.N. Hedhili, H. Wang, U. Schwingenschlogl, and H.N. Alshareef, “Anomalous Positive Flatband Voltage Shifts in Metal Gate Stacks Having Rare-Earth Oxide Capping Layers”, Applied Physics Letters 100, 102111 (2012).

74.   **R.B. Rakhi, W. Chen, and H.N. Alshareef, “Conducting polymer/carbon nanocoil composite electrodes for efficient supercapacitors”, Journal of Materials Chemistry 22, (11), 5177(2012). 

75.   **S.R.S Kumar, A.I. Abutaha, M. N. Hedhili, and H.N. Alshareef, “Modeling the transport properties of epitaxially-grown thermoelectric oxide thin films using spectroscopic ellipsometry”, Applied Physics Letters 100 (5), 052110 (2012).

76.   **Mahmoud Al Ahmad and H. N. Alshareef, “Energy Harvesting from Radio Frequency Propagation Using Piezoelectric Cantilevers”, Solid State Electronics  68, 13 (2012).

77.   **M. A. Khan, U. Bhansali, and H.N. Alshareef, “Doped polymer electrodes for high performance ferroelectric capacitors on plastic substrates”, Applied Physics Letters 101, 14330(2012).

78.   **E. Fuentes-Hernandez, M. A. Quevedo-Lopez, E.L. Salguero, P. Shah, B.E. Gnade, and H.N. Alshareef, “Synthesis and Characterization of Pb(Zr,Ti)O3-Pb(Nb,Zn)O3 Thin Film Cantilevers for Energy Harvesting Applications”, Smart Materials Research 2012, doi:10.1155/2012/872439

2011

79.   **W. Chen, R.B. Rakhi, M. Liangbing, Xing Xie, Y. Cui, and H.N. Alshareef, “High Performance Supercapacitors on a Sponge”, Nano Letters 11, 5165 (2011).

80.   **Liangbing Hu, W. Chen, H.N. Alshareef, and Yi. Cui, “Mass Loading of MnO2-Carbon Nanotube Electrodes for Textile Pseudocapacitors”, ACS Nano, 5 (11), 8904(2011).

81.   **R.B. Rakhi, W. Chen, D.K. Cha, and H.N. Alshareef, “Energy Storage Devices with Electrodes Incorporating Carbon Nanocoils & Metal Oxide Nanoparticles”, Journal of Physical Chemistry C 115 (29), 14392 (2011). 

82.   **R.B. Rakhi and H.N. Alshareef, “Enhancement of the Energy Storage of Supercapacitors using Graphene Based Nanocomposite Electrodes”, Journal of Power Sources 196, 8858 (2011).

83.   **R.B. Rakhi, W. Chen, D.K. Cha, and H.N. Alshareef, “High Performance Supercapacitors Using Electrodes Incorporating Metal Oxide Nanoparticles Anchored onto Graphene Nanosheets”, Journal of Materials Chemistry 21, 16197(2011).

84.   **S.R.S Kumar, Dongkyu Cha, and H.N. Alshareef, “Substrate dependent transport properties of double-filled CoSb3 Thermoelectric thin films”, Journal of Applied Physics 110, 083710 (2011).

85.   **M.A. Khan, U. Bhansali and H.N. Alshareef, “All-Polymer, Transparent and Flexible Ferroelectric Memory Device”, Organic Electronics 12, 2225(2011).

86.   **J.J. Pulikkotil, H.N. Alshareef, and Udo Schwingenschlogl, “Role of FeSb6 octahedral deformations for the electronic structure of LaFe4Sb12”, Chemical Physics Letters 514, 54 (2011).

87.   **S.R.S Kumar, T. Tritt, A. Alyamani, and H.N. Alshareef, “Pulsed Laser Deposition & Thermoelectric Properties of Double-Filled Skutterudite Thin Films”, Journal of Materials Research 26, 1836 (2011).

88.   **E. Fuentes, L. Baldenegro, M. A. Quevdo-Lopez, Bruce Gnade, P. Shah, A. Hande, H.N. Alshareef, “Optimization of Pb(Zr0.53,Ti0.47)O3 films for micropower generation using integrated cantilevers”, Solid State Electronics 63, 89 (2011).

89.   **Mahmoud AlAhmad, A. M. Elshurafa, K. N. Salama, and H.N. Alshareef, “Modeling of MEMS piezoelectric energy harvesters using electromagnetic and power system theories”, Smart Materials & Structures 20, 085001(2011). 

90.   **W.T. Wondmagegn, N. T.Satyala, I. Mehia-Silva, M.A. Quevedo-Lopez, S. Gowrisanker, H.N. Alshareef H.J. Stiegler B.E. Gnade, “Experimental and modeling study of the capacitance–voltage characteristics of metal–insulator–semiconductor capacitor based on pentacene/parylene”, Thin Solid Films, 519,4313 (2011).

91.   **W.T. Wondmagegn, N. T. Satyala, R.J. Pieper •M.A. Quevedo-Lopez, S. Gowrisanker, H.N. Alshareef H.J. Stiegler B.E. Gnade, “Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors ”, J. of Computational Electronics, 10,144 (2011).

92.   **Mahmoud AlAhmad and H. N. Alshareef, “Modeling the Power Output of Piezoelectric Energy Harvester”, Journal of Electronic Materials 40, 1477(2011).

93.   **M.A. Quevedo-Lopez, W. T. Wondmagegn, H. N. Alshareef, R. Ramirez-Bon, and B. E Gnade,“Thin Film Transistors for Flexible Electronics: Contacts, Dielectrics and Semiconductors”, Journal of Nanoscience & Nanotechnology 11, 5532(2011).

94.   **H.N. Alshareef, M.A. Quevedo-Lopez, R. Mure, and P. Majhi, “Depth Profiling of La2O3/HfO2 Stacked Dielectrics for Nanoelectronic Device Applications”, Electrochemical & Solid State Letters, 14, H139 (2011).  

95.   **H.N. Alshareef, M.A. Quevedo, P. Majhi., Guest Editor’s Article, “Electrical Contacts to Nanoelectronics”, Materials Research Society (MRS) Bulletin 36 (2), 90 (2011). 

96.   **C. L. Hinkle, R. V. Galatage, R. A. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. J. Chambers, and J. B. Shaw, “Band-Edge Effective Work Functions by Controlling HfO2/TiN Interfacial Composition for Gate-Last CMOS,” ECS Transactions 35, 285 (2011).


 

2010

97.   **H.N. Alshareef, A.J. Caraveo-Frescas, and D.K. Cha, “Nanoscale Gadolinium Oxide Capping Layers on Compositionally Variant Gate Dielectric”, Applied Physics Letters 97, 202108 (2010).

98.   **S.R.S Kumar, N. M. Hedhili, and H.N. Alshareef, “Charge State of Manganese and its Influence on Mn-In2O3 Dilute Magnetic Semiconductors”, Applied Physics Letters 97, 111909 (2010). 

99.   **G. Gutierrez-Heredia, L. A. Gonzalez, H.N. Alshareef, B E Gnade, and M. Quevedo-Lopez, “Flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes”, Semiconductor Science Technology 25, 115001(2010).

100. **E. Fuentes, W. Debray, P. Shah, A. Hande, M. Quevedo-Lopez, Bruce Gnade, and H.N. Alshareef, “Fabrication and Characterization of Pb(Zr,Ti)O3–Pb(Nb1/3 Zn2/3)O3 thin film and cantilevers”, J. Electronic Materials, Volume 40, Number 1, 85(2010).

101. **Mahmoud Al Ahmad and H. N. Alshareef, “A Capacitance-Based Methodology for the Estimation of Piezoelectric Coefficients of Poled Piezoelectric Materials”, Electrochemical & Solid State Letters, vol 13(12), G108-110(2010). 

102. **J.J. Pulikkotil, H. N. Alshareef, and U. Schwingenschlogl, “Variation of equation of state parameters in the Mg2(Si1−xSnx) alloys”, J. Phys.: Cond. Matter 22 (2010) 352204.

103. **A. Salas-Villasenor, B. Gnade, H.N. Alshareef; D. Cha; R. Ramirez Bon; J. M. Silva, J. Horvath, "Impact of Gate Dielectric on Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics”, Electrochemical & Solid State Letters 13 (9), II313-II316 (2010).

104. **C. L. Hinkle, R.Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, “Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO2 gate stacks”, Appl. Phys Lett. 96, 103502 (2010).

105. **K. Xiong, W. Wang, H. N. Alshareef, R. Gupta, J. B. White, B. E. Gnade, and K.J. Cho “Electronic structures and stability of Ni/Bi2Te3 and Co/Bi2Te3 interfaces”, Journal of Physics D: Applied Physics 43, 115303 (2010).

106. **D. Mao, M.A. Quevedo-Lopez, H. Stiegler, B.E. Gnade, and H.N. Alshareef,

“Optimization of Poly(vinylidene fluoride-trifluoroethylene) Films as Non-volatile Memory for Flexible Electronics”, Organic Electronics 11,925(2010).

107. **Rahul P. Gupta, K. Xiong, J. B. White, Kyeongjae Cho, H. N. Alshareef, and B. E. Gnade, “Low Resistance Ohmic Contacts to Bi2Te3“, Journal of Electrochemical Society, Vol 157, 6, H666 (2010).

108. **L. A. Baldenegro, W. Debray, E. Fuentes, M.A. Quevedo-Lopez, H.N. Alshareef, Pradeep Shah and B.E. Gnade “Study on the Microstructure and Electrical Properties of Pb(Zr0.53 Ti0.47)O3 Thin-films ”, Materials Science Forum  644, 97-100 (2010).

109. **M.D. Morales-Acosta, H. N. Alshareef, B. Gnade, R. Ramirez-Bon and M.A. Quevedo-López “Dielectric properties of PMMA-SiO2 hybrid films” Materials Science Forum  644, 25-28, 644 (2010).

110. **C. L. Hinkle, R. Chapman, E. M. Vogel, H. N. Alshareef, C. Freeman, E. Wimmer, H. Niimi, A. Li-Fatou, J. B. Shaw, and J. J. Chambers, “Dipole Controlled Metal Gate with Hybrid Low Resistivity Cladding for Gate-Last CMOS with Low Vt”, VLSI Technology Symposium 2010, June, 2010.

111. **L.A. García-Cerda, B.A. Puente-Urbina, M.A. Quevedo-López, B.E. Gnade, L. Baldenegro-Pérez, H. N. Alshareef, M.A. Hernández-Landaverde “Structural and morphological properties of HfxZr1-xO2 thin films prepared by Pechini route” Materials Science Forum  644, 113-116 (2010).

112. **R. Ramos-González, L.A. Garcia-Cerda, H. N. Alshareef, B. E. Gnade and M.A. Quevedo-Lopez “Study of hafnium (IV) oxide nanoparticles synthesized by polymerized complex and polymer precursor derived sol-gel methods” Materials Science Forum 644, 75-78  (2010).

2009

113. **R. Gupta, H.N. Alshareef, D. Iyore, J. White, KJ. Cho, B. Gnade, “Characterization of Co and Ni Contacts to Bi2Te3 Thermoelectrics”, Electrochemical & Solid State Letters, Vol 12, (10), H395(2009).

114. S. Gowrisanker, M. Quevedo, H.N. Alshareef, and B. Gnade, R. Krishna, S. Vengupal, and D. Allee, “A novel low temperature integration of hybrid CMOS devices on flexible substrates”, Organic Electronics, Vol 10, (7),1217(2009).

115. R. Gupta, J. White, H.N. Alshareef, and B. E. Gnade, “Calculation of Contact Resistance of Metal Contacts on Thermoelectrics Using the Cox and Strack Method”, Electrochemical and Solid State Letters  12, (8), H302(2009).

116. S. Gowrisanker, M. A.Quevedo, H.N. Alshareef, and B.E. Gnade, “Time dependent breakdown characteristics of parylene dielectric in metal-insulator-metal capacitors”, Organic Electronics, Vol  10, (5) 1024(2009).

117. S. Gowrisanker, Y. Ai , H. Jia, M. Quevedo, and H.N. Alshareef, R. Bennet, and B.E. Gnade, “Organic Thin-Film Transistors with Low Threshold Voltage Variation on Low-Temperature Substrates”, Electrochemical & Solid State Letters  12,(3), H50-H53 (2009).

118. Devine RAB, Mee JK, Hjalmarson HP, H.N. Alshareef et al.,  “A simplified approach to estimating total trap contributions in negative bias temperature instability”, Journal of  Applied Physics,  106 (2),  024508(2009).

119. S. Gowrisanker, M.A.Quevedo-Lopez, H.N.Alshareef, B. Gnade, S. Venugopal, R. Krishna, K. Kaftanoglu, D. Allee, “Low Temperature Integration of Hybrid CMOS Devices on Plastic Substrates”, 2009 Flexible Electronics & DISPLAYS Conference,  61(2009). 

120. K. Palaniappan, J.W. Murphy, N. Khanam, H. N. Alshareef, M. A. Quevedo-Lopez, M. C. Biewer, S. Y. Park, M. J. Kim, B. E. Gnade, M. C. Stefan, “Poly(3-hexylthiophene)-CdSe Quantum Dot Bulk Heterojunction Solar Cells: The Influence of the Functional End-Group of the Polymer”, Macromolecules 42, (12) 3845(2009).

121.D.R. Allee, S. Venugopal, R. Krishna, K. Kaftanoglu, M.A. Quevedo-Lopez, S. Gowrisanker, A. E. Avendano-Bolivar, H. N. Alshareef, B. Gnade, “Flexible CMOS and Electrophoretic Displays” Invited Paper, 2009 SID International Symposium Digest of Technical Papers, Vol XL, BOOKS I - III (2009).

122. S. Gowrisanker, Y. Ai, H. Jia, M. A. Quevedo-Lopez, H. N. Alshareef, I. Trachtenberg, H. Stiegler, H. Edwards, R. Barnett, and B. E. Gnade, “Organic Thin-film Transistors with Low Threshold Voltage Variation on Low Temperature Substrates” Electrochemical and Solid-State Letters, 12(3) H50-H53 (2009).

123. D. Iyore, O. D. Iyore, T. H. Lee, R. P. Gupta, J. B. White, H. N. Alshareef, M. J. Kim and B.E. Gnade, “Interface Characterization of Nickel Contacts to Bulk Bismuth Tellurium Selenide”,  Surface and Interface Analysis, 41, 440(2009).

124. U. Bhansali, M.A. Quevedo, H.P. Jia, H.N. Alshareef, D.K. Cha, M. Kim, and B.E. Gnade, “Characterization of organic thin films using transmission electron microscopy and Fourier Transform Infra-Red spectroscopy”, Thin Solid Films, 517 (20), 5825(2009).


 

2008

125. H.N. Alshareef, M. Quevedo, H.C. Wen, C. Huffman, M. El-Bounani and B.A. Gnade,  “Impact of carbon incorporation on the effective work function of WN and TaN metal gate electrodes”, Electrochemical & Solid State Letters 11, H182 (2008).

126. G. Srinivas, Y. Ai, M. A. Quevedo, H.N. Alshareef, E. Vogel, and B.E. Gnade, “Impact of metal/semiconductor contact thickness ratio on pentacene thin film transistor performance”, Applied Physics Letters  92, 153305(2008).

127. P. Kirsch, …, H .N. Alshareef, “Dipole Model Explaining High-k/metal gate Field Effect Transistor Threshold Voltage Tuning”, Applied Physics Letters 92, 092901(2008).

128. R. A. Devine, H. Hjalmarson, H. N. Alshareef, M. A. Quevedo, “Negative Bias Temperature Instability and Relaxation in HfSiON Gate Stack Field Effect Devices”, Applied Physics Letters  92, 153512(2008).

129. H.C. Wen, P. Majhi, Choi K, C.S. Park, H. N. Alshareef et al., “ Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes “ Microelectronic Engineering  85, 2-8 (2008).

130. Devine RAB, H. N. Alshareef, Quevedo-Lopez MA , “Slow trap charging and detrapping in the negative bias temperature instability in HfSiON dielectric based field effect transistors”,J. Applied Physics,104 (12),  124109(2008).

131. R. Devine, M. A. Quevedo, and H. N. Alshareef, “Radiation Hardness of Devices with HfO2 Thin Film Dielectrics”, J.  Applied Physics 103, 064104(2008).

 

 

2007

 

132. H.C. Wen, S.C. Song, C.S. Park, C. Burham, G. Bursuker, M. Quevedo, K. Chio, and H. N. Alshareef, “Gate first metal-aluminum-nitride PMOS electrodes for 32nm low standby power applications”, 2007 VLSI Technology Symposium, 160 (2007)

 

133. D. A. M. Montijo, M.S. Lerma, M.Q. Lopez, M. Elbounnani, H. N. Alshareef, F.A.E. Beltran, and R. R. Bon, “Morphological and Chemical Study of the Initial Growth of CdS Thin Films Using an Ammonia-Free Process”, Applied Surface Science  254 (15), 499(2007).

 

134. J. Ha, H.N. Alshareef, J. Chambers, Y. Sun, P. Pianetta, P. McIntyre, and L. Colombo, “Oxygen Transfer from Metal Gate to High-k Gate Dielectric Stack: Interface Structure & Property Changes,” ECS Trans. 11 [4], 213-18 (2007).


2006

 

135. H.N. Alshareef, H.R. Harlan, H.C. Wen, P. Majhi, H.F. Luan, K. Choi, B.H. Lee, R. Jammy, “Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric”  VLSI Technology Symposium  2006, 10 (2006).

 

136. H.N. Alshareef, M. A. Quevedo, H.C. Wen, R. Harris, P. Kirsch, Majhi P, Lee BH, Jammy R, Lichtenwalner DJ, Jur J.S., Kingon AI. “Work function engineering using lanthanum oxide interfacial layers”, Applied Physics Letters 89, 232103, (2006).

 

137. H.N. Alshareef, H.F. Luan, K. Choi, H.R. Harris, H.C. Wen, M. Quevedo-Lopez, P. Majhi, and B.H. Lee, “ Metal Gate Work Function Engineering Using AlNx Interfacial Layers” , Applied Physics Letters  88, 112114(2006).

 

138. H.N. Alshareef, K.Choi, H.C. Wen, H. Luan, H. Harris, P. Majhi, B.H. Lee, and R. Jammy, R.M. Wallace, and B. Gnade, “Composition Dependence of the Work Function of Ta1-x AlxNy Metal Gates”, Applied Physics Letters 88, 072108 (2006).

 

139. H.N. Alshareef, H.C. Wen, H.F. Luan, K. Choi, H.R. Harris, Y. Senzaki, P. Majhi, B.H. Lee, B. Foran and G. Lian “Temperature dependence of the work function of ruthenium-based gate electrodes”, Thin Solid Films , vol. 515 (4), 1294(2006).

 

140. M.P. Agustin, H.N. Alshareef, M.A. Quevedo-Lopez, and S. Stemmer, “Influence of AIN layers on the interface stability of HfO2 gate dielectric stacks“, Applied Physics Letters 89 (4), 041906 (2006).

 

141. K. Choi, H.N. Alshareef, H.C. Wen, H. Harris, H. Luan, Y. Senzaki, P. Lusaght, P. Majhi, and B.H. Lee, “Effective work function modification of atomic-layer-deposited-TaN film by capping layer” , Applied Physics Letters 89 (03), 032113 (2006).

 

142. P.Y. Hung, H. N. Alshareef, T. Lafford, D. Keith Bowen, P. Majhi and A. Diebold, “Application of X-ray metrology in the characterization of metal gate thin films”, Journal of Vacuum Science & Technology B24,(2006): 2437-2441.

 

143. H. R. Harris, H. N. Alshareef, H.C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C.S. Park, H.B. Park, M. Hussain, B.S. Ju, P.D. Kirsch, S.C. Song, P. Majhi, B.H. Lee, R. Jammy “Simplified Manufacturable Band Edge Metal Gate Solution for NMOS Without a Capping Layer”, IEDM Technology Symposium, 2006.

 

144. M.M. Hussain, M. Quevedo, H.N. Alshareef, H.C. Wen , Larison D, Gnade B, El-Bouanani M. “Thermal annealing effects on a representative high-k/metal film stack” Semiconductor Science And Technology, 21 (10): 1437-1440, (2006).

 

145. M.M. Hussain, M.Quevedo, H.N. Alshareef, D. Larison, B. Gnade, “Deposition method-induced stress effect on ultrathin titanium nitride etch characteristics”, Electrochemical and Solid State Letters, 9 (12): G361-G363 (2006).

 

146. M.A. Quevedo, S. Krishnan, P. Kirsch, H.N. Alshareef, B.E. Gnade, M.J. Kim, Robert Wallace, B. H. Lee,R. Jammy. “Structure-Property Relationships in Ultrathin Hf-Based Gate Dielectrics” Future Fab International, Vol 21, July 01, (2006).

 

147. M. A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, H. N. Alshareef, J. Barnett, H. R. Harris, A. Neugroschel, F.S. Aguirre-Tostado, B. E. Gnade, M. J. Kim, and B.H. Lee, “Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling”, European Solid State Device Research Conference, 113(2006).

 

 

148. H. C. Wen, R. N. Choi, G. A. Brown, T. Boscke, K. Matthews, H. R. Harris, K. Choi, H. N. Alshareef, H. F. Luan, G. Bersuker, P. Majhi, D. L. Kwong, and B. H. Lee, "Comparison of effective work function extraction methods using capacitance and current measurement Techniques," IEEE Electron Device Letters 27, pp. 598-601, (2006).

 

149. P. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. N. Alshareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B .H. Lee, J.G. Wang, G. Pant1, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy. “Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability”, IEDM Technical Digest 2006, (2006).

 

150. H. Harris, S. Krishnan, H. C. Wen, H. N. Alshareef, A. Rao, L. Solis, P. Majhi, R. Choi, B. H. Lee, G. Bersuker, and G. A. Brown, "Reliability Characteristics of Metal/High-? PMOS with Top Interface Engineered Band Offset Dielectric (BOD)," IEEE International Reliability Physics Symposium, 661(2006).

 

 

2005

 

151. H. N. Alshareef, H.C. Wen, H.R. Harris, K. Choi, H.F. Luan, P. Lysaght, P. Majhi, B.H. Lee, and M. El-Bounani, “Modulation of Silicon Work Function Using Thin TaN Interlayers”, Applied Physics Letters  87(05), 052109 (2005).

 

152. H. N. Alshareef, H. Niimi, A. Varghese, M. Bevan, R. Kuan, J. Holt, P. Tiner,  “Intrinsic reoxidation of plasma nitrided gate dielectrics”,  Applied Physics Letters 86 (13), 132901(2005).

 

153. H. N. Alshareef, Z. Zhang, P. Majhi, G. Brown, P. Zeitzoff, H. Huff, and B.H. Lee, “Gate Electrode Development for Dual Metal-Gate CMOS Applications”, Future Fab International, 19, 91(2005).

 

154. H. N. Alshareef, K. Choi, H. C. Wen, H. Harris, H. Luan, P. Lysaght, P. Majhi, and B. H. Lee, "Gate Work Function Modification Using Ultra-Thin Metal Interlayers”, Electrochemical Society Proceedings” 2005-05, 198 (2005).

 

155. H.F. Luan, H.N. Alshareef, P. S. Lysaght, H. R. Harris, H. C. Wen, K. Choi, Y. Senzaki, P. Majhi, and B. H. Lee “Evaluation of Tantalum-silicon alloys as gate electrodes”,  Applied Physics Letters 87 (21), 212110 (2005).

 

156. H.F. Luan, H. N. Alshareef, H. R. Harris, H. C. Wen, K. Choi, Y. Senzaki, P. Majhi, and B. H. Lee, “Evaluation of Titanium Silicon Nitride as Gate Electrodes for CMOS Devices”,  Applied Physics Letters 88 (14), 142113 (2005).

 

157. H. C. Wen, H. N. Alshareef, H. Luan, K. Choi, P. Lysaght, H. R. Harris, C. Huffman, G. A. Brown, G. Bersuker, P. Zeitzoff, H. Huff, P. Majhi, and B. H. Lee, "Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications," VLSI Technology Symposium, 2005 ,46(2005).

 

158. P. Majhi, H.C. Wen, H.N. Alshareef, K. Choi, H.F. Luan, and B.H. Lee, 2005 Taiwan VLSI Technology Symposium, 105(2005).

 

159. K. Choi, P. Lysaght, H. N. Alshareef, C. Huffman, H. C. Wen, R. Harris, H. Luan, P. Y. Hung, C. Sparks, M. Cruz, K. Matthews, P. Majhi, and B. H. Lee, "Growth mechanism of TiN film on dielectric films and the effects on the work function," Thin Solid Films 486,141(2005).

 

160. H. C. Wen, P. Lysaght, H. N. Alshareef, C. Huffman, H. R. Harris, K. Choi, Y. Senzaki, H. Luan, P. Majhi, B. H. Lee, M. J. Campin, B. Foran, G. D. Lian, and D. L. Kwong, "Thermal Response of Ru electrodes in contact with SiO2 and Hf-based high-k gate dielectrics," Journal of Applied Physics 98, 3520(2005).

 

161. K. Choi, P. Lysaght, H.-C. Wen, K. Matthews, H. N. Alshareef, C. Huffman, R. Harris, H. Luan, P. Majhi, and B. H. Lee, "Growth mechanism of ALD-TiN and the thickness dependence of work function," Taiwan VLSI Technology Symposium 2005, 103(2005).

 

162. K. Choi, H.-C. Wen, H. N. Alshareef, R. Harris, P. Lysaght, H. Luan, P. Majhi, and B. H. Lee, "The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode,"  European Solid-State Device Research Conference, 101 (2005).

 

163. P. Majhi, H. C. Wen, H. N. Alshareef, K. Choi, R. Harris, P. Lysaght, H. Luan, Y. Senzaki, S. C. Song, B. H. Lee, and C. Ramiller, "Evaluation and integration of metal gate electrodes for future generation dual metal CMOS," IEEE International Conference on Integrated Circuit  Technology, 69-72 (2005).

 

164. P. S. Lysaght, H.-C. Wen, H. N. Alshareef, K. Choi, R. Harris, H. Luan, Y. Senzaki, G. Lian, M. Campin, M. Clark, B. Foran, P. Majhi, and B.-H. Lee, "Physical Characterization of Novel Metal Electrodes for Hf-based Transistors," Characterization and Metrology for ULSI Technology 2005, AIP Conference Proceedings -- September 9, 2005 Volume 788, pp. 136-140

 

165. Z. Zhang, S.C. Song, C. Huffman, J. Barnett, N. Moumen, H.N. Alshareef, P. Majhi, M. Hussain, M. Akbar, J.Sim, S. Bae, B. Sassman, and B.H. Lee, “Interation of Dual Metal gate CMOS Using TaSiN and Ru Metal Gates”, 2005 VLSI Technology Symposium, 50 (2005).

 

166. Z. Zhang, S.C. Song, C. Huffman, M.M. Hussain, J. Barnett, N. Moumen, H.N. Alshareef, P. Majhi, J.H. Sim and B.H. Lee, Electrochemical and Solid-State Letters 8, Issue 10, pp. G271-G274 (2005)

 

167. H. C. Wen, K. Choi, P. Lysaght, P. Majhi, H. N. Alshareef, C. Huffman, R. Harris, H. Luan, B. H. Lee, N. Yamada, and S. Wickramanayaka, "Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS," Taiwan VLSI Technology Symposium, 107 (2005).

 

168. H. R. Harris, H. C. Wen, K. Choi, H.N. Alshareef, H. Luan, Y. Senzaki, C. D. Young, S. C. Song, Z. Zhang, G. Bersuker, P. Majhi, and B. H. Lee, "Demonstration of high performance transistors with PVD metal gate,"  European Solid-State Device Research Conference, 2005. pp. 431-434, (2005).

 

169. S. C. Song, B. Lee, Z. Zhang, K. Choi, S. H. Bae, H.N. Alshareef, P. Majhi, H. Wen, J. Bennett, B. Sassman, and P. Zeitzoff, "Comparision of MOSFET Characteristics Between ALD and MOCVD TiN Metal Gate on Hf Silicate," Elechrochemical Society Proceedings, 2005-5, 483 (2005).

 

170. D. Rogers, T. Laaksonen,  A. Varghese, C. Otten, M. Kasner, H. N. Alshareef, M. Bevan, “In-Line Control and Rapid Process Development of Nitrided Gate Oxides” , Characterization and Metrology for ULSI Technology 2005, AIP Conference Proceedings, Vol. 788,172 (2005)

 

 

2004

 

171. R. Khamankar, H. Bu, S. Chakravarthi, P. Chidambaram, M. Bevan, A. Krishnan, H. Niimi, B. Smith, J. Blatchford, B. Hornung, J. P. Lu, P. Nicollian, B. Kirkpatrick, D. Miles, D. Farber, H.N. Alshareef, A. Varghese, A. Gurba,  et al. “An Enhanced 90 nm Technology Node with Strong Performance Improvement from Stress and Mobility Increase”, 2004 VLSI Technology Symposium”, 162(2004).

 

172. B.H. Lee, C.D. Young, R. Choi, J.H. Sim, G. Bersuker, C.Y. Kang, R. Harris, G.A. Brown, K. Matthews, S.C. Song, N. Moumen, J. Barnett, P. Lysaght, K.S. Choi, H.C. Wen, C. Huffman, H. N. Alshareef, P. Majhi, S. Gopalan, J. Peterson, P. Kirsh, H.-J. Li, J. Gutt, M. Gardner, H.R. Huff, P. Zeizoff, R. Murto, L. Larson, C. Ramiller, IEDM Technology Symposium,859 (2004).

 

173. H. C. Wen, P. Lysaght, M. J. Campin, B. Foran, C. Huffman, H. N. Alshareef, K. Choi, and P. Majhi, "Thermal Response of Ru Electrodes in Contact with SiO2 and HfSiOx Gate Dielectrics", Proceedings of the Materials Research Society, (2004).

 

 

2003

 

174. K.J. Yang, T.J. King, C. Hu, S. Levy, and H.N. Alshareef, “Electron Mobility in MOSFETS with Ultrathin  RTCVD Silicon Nitride/Oxynitride Gate Dielectric”, Solid-State Electronics  47,149(2003). 

 

175. B. Hoerning, R. Khamankar, H. Niimi, M. Goodwin, L. Robertson, D. Miles, B. Kirkpatrick, H.N. AIshareef, A. Varghese, M. Bevan, P. Nicollian , P R. Chidambaram, S. Chakravarthi, A. Gurba, X. Zhang, I. Blatchford, B. Smith, J.P. Lu, J. Deloach, B. Rathsack, C. Bowen, G. Thakar, C. Machala and T. Grider et al. “A High Performance 90 nm Technology With 37 nm Gate Length,” VLSI Technology Symposium 2003, 85(2003).

 

2002

 

176. A. Karamcheti, V.H.C. Watt, H.N. Alshareef, T.Y. Luo, M.D. Jackson, and H.R. Huff, C. Steinbruchel, “Characterization of Ultrathin Gate Dielectrics formed by In-Situ Team Generation with Nitrogen Postprocessing”, Journal of Electronic Materials 31, 124(2002).

 

177. F. N. Cubaynes, C.J Dachs, C. Detcheverry, A. Zegers, V.C. Venezia, J. Schmitz, P.A. Stolk, M. Jurczak, K. Henson, R. Degraeve, A. Rothschild, T. Conard, J.Petry, M. Da Rold, M. Schaekers, G. Badenes, L. Date, D. Pique, H.N. Al-Shareef, R.W. Murto, “Gate Dielectrics for High Performance and Low Power SoC CMOS” Applications”, European Solid State Device Research Conference, 427 (2002).

 

178. A. Veloso, M. Jurczak, F. N. Cubaynes, R. Rooyackers, S. Mertens, A. Rothschild,M. Schaekers, H. N. Alshareef, R. W. Murto, C. J. Dachs, “RPN Oxynitride Gate Dielectrics for 90 nm Low Power CMOS Applications”  European Solid State Device Research Conference, 159 (2002).

 

179. P.Y. Hung, G.A. Brown, X. Zhang, J. Bennett, H. N. Alshareef, C. Young, C. Oroshiba, A. Diebold, ”Metrology Study of Sub 20Å Oxynitride by Corona-Oxide-Silicon (COS) and Conventional C-V Approaches,”  MRS Spring 2002 Conference Proceedings, 716 (2002).

 

 

 

2001

 

180. H.N. Alshareef, A. Karamcheti, T.Y. Luo, G. Bersuker, G.A. Brown, M. Laughery, V. Watt, M.D. Jackson, H. R. Huff, K. Ahmad, R. Jallepally, D. Noble, N. Tam, and G. Miner, “Device Performance of ISSG oxide Gate Dielectrics Nitrided by Remote Plasma Nitridation”, Applied Physics Letters 78, 3875(2001).

 

181. H.N. Alshareef, A. Karamcheti, T.Y. Luo, G. Bersuker, G.A. Brown, M. Laughery, V. Watt, M.D. Jackson, H. R. Huff, K. Ahmad, R. Jallepally, D. Noble, N. Tam, and G. Miner, “Plasma Nitridation of Very Thin Dielectrics” , Microelectronic Engineering  59, 317(2001).

 

182. R. Ahmad-Bitar, S. Abdul Jawad, and H. N. Alshareef, “Characterization of Zn-Doped CdS Thin Films”, Dirasat 28, 22 (2001).

 

 

 

2000

 

183. T.Y. Luo, M. Laughery, G.A. Brown, H.N. Alshareef, V.C. Watt, A. Karamcheti, M.D. Jackson, and H.R. Huff, “Effect of H2 Content on Reliability of Ultrathin in-situ Steam Generated (ISSG) Oxides”  IEEE Electron Device Letters, vol. 21, 382(2000).

 

184. H.N. Alshareef, T.Y. Luo, A. Karamcheti, G.A. Brown, M. Laughery, V. Watt, M.D. Jackson, H.R. Huff, K. Ahmad, R. Jallepally, D. Noble, N. Tam, and G. Miner, “Gate Dielectrics Formed by Remote Plasma Nitridation of In-Situ Steam Generated (ISSG) Oxides”  Proc. of the 198th Electrochemical Society  Meeting 2000-9, 231(2000).

 

185. T.Y. Lou, H.N. Alshareef, G.A. Brown, M. Laughery, V.H.C. Watt, A. Karamcheti, M.D. Jackson, and H.R. Huff, “Correlation Between the Reliability of ISSG SiO2 Oxide and Hydrogen Content”, SPIE Proceedings Vol. 4181, 220(2000).

 

186. T.Y. Lou, H.N. Alshareef, G.A. Brown, M. Laughery, V.H.C. Watt, A. Karamcheti, M.D. Jackson, and H.R. Huff, “Prospective Technology for System-on-a-Chip: N2 Implant Followed by VHP O2 Re-Oxidation”, SPIE Proceedings Vol. 4181, 271(2000).

 

187. T.Y. Lou, H.N. Alshareef, A. Karamcheti, V.H.C Watt, G.A. Brown, M.D. Jackson, H.R. Huff, B. Evans, and D.L. Kwong, “High Performance NMOS Devices Using Ultra-thin VHP Oxynitride” SSDM Extended Abstarcts 2000, 178(2000).

 

188. A. Karamcheti, V.H.C. Watt, H.N. Alshareef, T.Y. Luo, G.A. Brown, M.D. Jackson, and H.R. Huff, “Silicon Oxynitride Films as a Segue to the High K Era”, Semiconductor Fabtech 12th Ed., 207(2000).

 

 

 

1997

 

189. H.N. Alshareef and D.B. Dimos "Resistance Degradation in Donor-doped Pb(Zr,Ti)O3 Thin Film Capacitors",  J. Amer. Ceram. Soc. 80, 3127(1997).

 

190. H.N. Alshareef, D. Dimos, M.V. Raymond, and R. W. Schwartz, "Capacitance Tuning and Calculation of the Dielectric Constant of Capacitor Structures with Interdigital Electrodes", Journal of Electroceramics 1, 145(1997).

 

191. H.N. Alshareef, D. Dimos,and B.A. Tuttle, "Metallization Schemes for Thin Film Decoupling Capacitors", Journal of Materials Research 12, 347(1997).

 

192. H.N. Alshareef, D. Dimos, T.J. Boyle, W.L. Warren, and B.A. Tuttle, "A Model for the Optical and Electrical Polarization Fatigue of SrBi2Ta2O9", Integrated Ferroelectrics 15, 53(1997).

 

193. T.J. Boyle, H.N. Alshareef, C. D. Buchheit,  R.T. Cygan,  D. Dimos, M. A. Rodriguez, B. Scott, and Joseph W. Ziller D. Dimos, "Nono-Traditional Solution Routes to Ferroelectric materials”, Integrated Ferroelectrics 18, No.1,  213(1997).

 

194. T.J. Boyle and H.N. Alshareef, " A new and Rapid Process for the Production of Solution Derived (Pb,La)(Zr,Ti)O3 Thin Films and Powders", Journal of Materials  Science 32, 2263(1997).

 

195. M.V. Raymond, H.N. Alshareef, D. Dimos, N. Missert,  and C.H. Mueller, "Sputter Deposition of SrTiO3 for Voltage Tunable Capacitors", Integrated Ferroelectrics 17, 247(1997).

 

196. W. L. Warren, G.E. Pike, D. Dimos, K. Vanheusden, H. N. Alshareef, "Relationships Among Ferroelectric Fatigue, Electronic Charge Trapping, Defect-Dipoles, and Oxygen Vacancies in Perovskite Oxides", Integrated Ferroelectrics 16, 77(1997).

 

197. T.J. Boyle, T.M. Alan, G.J. Moore, C.D. Buchheit, H.N. Alshareef, E.R. Mechenbier, and B.R. Bear, "Nb(V) Alkoxides: Synthesis, Structure, and Characterization",  Chemistry of Materials 9, 3187(1997).

 

 

 

1996

 

198. H.N. Alshareef, D. Dimos, T.J. Boyle, W.L. Warren, and B.A. Tuttle, "A Qualitative Model for the Fatigue-Free Behavior of SrBi2Ta2O9", Applied Physics Letters 68, 690(1996).

 

199. H.N. Alshareef, D. Dimos,W.L. Warren, and B.A. Tuttle, "Voltage Offsets and Imprint Mechanism in SrBi2Ta2O9 Thin Films", Journal of Applied Physics  80, 4573(1996).

 

200. H.N. Alshareef, B.A. Tuttle, W. L. Warren, D. Dimos, M.V. Raymond , and M.A. Rodriguez, "Low Temperature Processing of Nb-doped Pb(Zr,Ti)O3 Capacitors with LSCO Electrodes", Applied  Physics  Letters  68, 272(1996).

 

201. H.N. Alshareef, B.A. Tuttle, W. L. Warren, T.J. Headley, and J.A. Voigt, "Effect of  B-site Cation Stoichiometry on Electrical Fatigue of RuO2/Pb(Zr,Ti)O3/RuO2 Capacitors ", Journal of Applied Physics  79, 1013(1996).

 

202. H.N. Alshareef and D. Dimos , "Accelerated Life-Time Testing and Resistance Degradation of Thin Film Decoupling Capacitors",  Proceedings of ISAF 10, 421(1996).

 

203. H.N. Alshareef, X. Chen, D.J. Lichtenwalner, and A.I. Kingon, "Analysis of the Oxidation Kinetics and Barrier Layer Properties of  ZrN and Pt/Ru Films for DRAM Applications",  Thin Solid Films 280, 265(1996).

 

204. W. L. Warren, H.N. Alshareef, D. Dimos, and  B.A. Tuttle, "Driving Forces Behind Voltage Shifts in Ferroelectrics", Applied Physics Letters 68, 1681(1996).

 

205. D. Dimos, H.N. Alshareef, W. L. Warren, and  B.A. Tuttle, "Photo-Induced Changes in the Fatigue Behavior of  SrBi2Ta2O9 and Pb(Zr,Ti)O3", Journal of Applied Physics 80, 272(1996).

 

206. M.V. Raymond, H.N. Alshareef, B.A. Tuttle, and D. Dimos, "RF Magnetron Sputter-Deposition of La1-xSrxCoO3/Pt Composite Electrodes", MRS Symp. Proc. 433,145(1996).

 

207. W.L. Warren, D. Dimos, H.N. Alshareef,  M.V. Raymond, B.A. Tuttle, and G.E. Pike, "Links Between Electrical and Optical Fatigue in Pb(Zr,Ti)O3  Thin Films", Journal of the American Ceramic Society  79, 1714(1996).

 

208. B. A. Tuttle, T.J. Headley, H.N. Alshareef, J.A. Voigt, and W. L. Warren, "Microstructure and 90Domain Assemblages of Pb(Zr,Ti)O3/RuO2 Capacitors as a Function of  Zr  to Ti  Stoichiometry", Journal of Materials Research 11, 2309(1996).

 

209. W.L. Warren, B.A. Tuttle, D. Dimos H.N. Alshareef, R. Ramesh, and J.T. Evans, "Voltage Shifts and Defect Dipoles in Ferroelectric Capacitors", MRS Symposium Proceedings 433, 257(1996).

 

210. D.B. Dimos, S.J. Lockwood, T.J. Garino, H.N. Alshareef, and R.W. Schwartz, "Integrated Decoupling Capacitors using Pb(Zr,Ti)O3 Thin Films", MRS Symposium Proceedings 433, 305(1996).

 

 

1995

 

211. H.N. Alshareef, K.R. Bellur, O. Auciello, and A. I. Kingon, "Ferroelectric Thin Film Capacitors with Hybrid (Pt, RuO2) Electrodes", Journal of Applied Physics  77, 2146(1995).

 

212. H.N. Alshareef, Y.L. Chen, O. Auciello, and A. I. Kingon, "Microstructural and Electrical Properties of  Ferroelectric Capacitors  with Pt/RuO2 Hybrid Electrodes", MRS Symposium. Proceedings  361, 229(1995).

 

213. H.N. Alshareef, O. Auciello, and A. I. Kingon, "The Influence of Pt Interlayers on the Electrical Properties of RuO2/ /Pb(Zr,Ti)O3 / /RuO2 Capacitor Heterostructures", Applied Physics  Letters  66, 239(1995).

 

214. H.N. Alshareef, K.R. Bellur, O. Auciello, and A. I. Kingon, "Electrical Properties of Pb(Zr,Ti)O3 with Modified RuO2 Bottom Electrodes",  Integrated Ferroelectrics 8, 151(1995).

 

215. H.N. Alshareef,  K.R. Bellur, O. Auciello, and A.I. Kingon, "Phase Evolution and Annealing Effects on the Electrical Behavior of PZT Capacitors with RuO2 Electrodes", Thin Solid Films 256, 73(1995).

 

216. H.N. Alshareef, O. Auciello, and A.I. Kingon, "Characterization of Sol-Gel Pb(ZrxTi1-x)O3 Thin Film Capacitors with Hybrid (Pt,RuO2) Electrodes," Science and Technology of Electroceramic Thin Films eds. O. Auciello, R. Waser NATO/ASI, Series E, Applied Science 284, 133 (1995).

 

217. B.A. Tuttle, H.N. Alshareef, W. L. Warren, M.V. Raymond, , and T.J. Headley, "La0.5Sr0.5CoO3 Electrode Technology for Nonvolatile Memories", Microelectronic Engeering 29, 223(1995).

 

218. X. Chen, A. I. Kingon, H.N. Alshareef, K.R. Bellur, K.D. Gifford, and O. Auciello, "Leakage and Interface Engineering in Titanate Thin Films for Nonvolatile Memory Applications",  Integrated Ferroelectrics 7, 291(1995).

 

219. S.R. Summerfelt, D. Kotecki, A. I. Kingon, and H.N. Alshareef, "Pt Hillock Formation and Decay", MRS Symposium Proceedings 361, 257(1995).

 

220. O. Auciello, K. D. Gifford, D.J. Lichtenwalner, R. Dat, H. N. Alshareef, K. R. Bellur, A.I. Kingon, “A review of composition-structure-property relationships for PZT-based heterostructure capacitors”,  Integrated Ferroelectrics 6, No. 1, 173(1995).

 

221. C. M. Foster, R. Csencsits, G. R. Bai, L.A. Wills,R. Hiskes, H.N.  Alshareef, and D. Dimos, “Structure and properties of heteroepitaxial Pb(Zr 0.35Ti0.65O3)/SrRuO3 multilayer thin films on SrTiO3(100) prepared by MOCVD and RF sputtering “, Integrated Ferroelectrics 10, 31(1995)

 

 

1994

 

222. H.N. Alshareef, A. I. Kingon, X. Chen, K. R. Bellur, and O. Auciello, "Contribution of Electrodes and Microstructures to the Electrical Properties of Pb(Zr,Ti)O3 Thin Film Capacitors", Journal of Materials Research 9, 2968(1994).

 

223. H.N. Alshareef, K. R. Bellur, O. Auciello, and A. I. Kingon, " Effect of Composition and Annealing Conditions on the Electrical Properties of Pb(Zrx ,Ti1-x)O3 Thin Films Deposited by the Sol-Gel Process", Thin Solid Films 252, 38(1994).

 

224. H.N. Alshareef, K. R. Bellur, O. Auciello, and A. I. Kingon, " Effect of Electrodes on the Microstructure and Phase Evolution of  Pb(Zr,Ti)O3 Thin Films", Ferroelectrics 152, 85(1994).

 

225. H.N. Alshareef, K.R. Bellur, O. Auciello, and A.I. Kingon, "Fatigue and Retention of Pb(Zr0.53Ti0.47)O3 Thin Film Capacitors with Pt and RuO2 Electrodes," Integrated Ferroelectrics 5, 185-196 (1994).

 

226. X. Chen, A.I. Kingon, H.N. Alshareef, and K.R. Bellur, "Electrical Transport and  Dielectric Breakdown in Pb(Zr,Ti)O3 Thin Films", Ferroelectrics 151,133(1994).

 

227. S. Summerfelt, D. Kotecki, A.I. Kingon, and H.N. Alshareef, "Pt Hillock Formation and Decay," Mat. Res. Soc. Fall Symp. Proc. Ferroelectric Thin Films IV (1994).

 

228. O. Auciello, H.N. Alshareef, K.D. Gifford, D.J. Lichtenwalner, R. Dat, K.R. Bellur, A.I. Kingon, and R. Ramesh, "A Review of Orientation-Microstructure-Property Relationships for PZT/Metal or Metal-Oxide Layered Heterostructures," MRS Symposium Proceedings Epitaxial Oxide Thin Films and Heterostructures . Eds D.K. Fork, J. M. Phillips, R. Ramesh, and R.M. Wolf, 341 (1994).

 

 

 

1993

 

229. H.N. Alshareef, K. D. Gifford, P.D. Hren, O. Auciello, and A. I. Kingon, "Electrodes for Ferroelectric Thin Films", Integrated Ferroelectrics 3, 321(1993).

 

230. H.N. Alshareef, K. D. Gifford, P.D. Hren, O. Auciello, and A. I. Kingon, "Bottom Electrodes for PZT Thin Films", Proceedings of ISIF 4, 181(1993).

 

231. A.I. Kingon, H.N. Alshareef, D.J. Lichtenwalner, R. Dat, and O. Auciello, "Current Status of Ferroelectric Thin Film Activities in the USA and Canada," The Sixth U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics, ed. A. Safari, 9-20 (1993).

 

 

 

1992

 

232. H.N. Alshareef, K.D. Gifford, P.D. Hren, S.H. Rou, O. Auciello, and A.I. Kingon, "Bottom Electrodes for PZT Thin Films," Proc. 4th International Symp. on Integrated Ferroelectrics 181, (1992).

 

233. I. Kingon, H.N. Alshareef, K. D. Gifford, T.M. Graettinger, S. H. Rou, P.D. Hren, and O. Auciello, "Sputter Deposition of  Ferroelectric Thin Films", Integrated Ferroelectrics 2, 361(1992).

 

234. K.D. Gifford, H.N. Alshareef, S. H. Rou, K.D. Gifford, O. Auciello, and A. I. Kingon, "Microstructure and Electrical Properties of PZT Thin Films Deposited by in-situ Ion Beam Sputtering", MRS Symposium Proceedings 243, 191(1992).

 

235. K. R. Bellur, H.N. Alshareef, S. H. Rou, and A. I. Kingon, "Electrical Characterization of Sol-Gel Derived PZT Thin Films", Proceedings of ISAF 8, 448(1992).

 

236. P.D. Hren, H.N. Alshareef, S.H. Rou, and A. I. Kingon, E.A. Irene, "Hillock Formation in Platinum Films", MRS Symposium Proceedings 260, 575(1992).

 

237. P.D. Hren, S.H. Rou, H.N. Alshareef, M.S. Ameen, O. Auciello, and A. I. Kingon, , "Bottom Electrodes for Integrated Pb(Zr,Ti)O3 Films", Integrated Ferroelectrics  2,311(1992).

 

 

1991

 

238. H.N. Alshareef, K.D. Gifford, M.S. Ameen., O. Auciello, and A. I. Kingon, "Processing and Electrical Characterization of Ion Beam Sputter-Deposited PZT Thin Films", Ceramic Transactions 25, 97(1991).

 

239. T.M. Graettinger, O. Auciello, M.S. Ameen, H.N. Alshareef, K.D.Gifford, O. Auciello, and A. I. Kingon, "Ion Beam Sputtering of  Ferroelectric Oxide Thin Films", MRS Symposium Proceedings 223, 273(1991).

 

240. M.S. Ameen , T.M. Graettinger, S.H. Rou,  H.N. Alshareef, K.D.Gifford, O. Auciello, and A. I. Kingon, "Processing and Structural Characterization of Ferroelectric Thin Films Deposited by Ion Beam Sputtering", MRS Symposium Proceedings. 200, 65(1991).

 

241. Kingon, M.S. Ameen , O. Auciello, K.D.Gifford, H.N. Alshareef,  T.M. Graettinger, S.H. Rou and P.D. Hren, "Processing-Structure Relations for Ferroelectric Thin Films Deposited by Ion Beam Sputter-Deposition", Ferroelectrics 116, 35(1991).

 

 

INVITED REVIEWS

 

1.      H.N. Alshareef, M. Quevedo, G. Srinivas, Y. Ai, and B. Gnade, “Flexible Devices & Circuits”, Future Fab International  25, 37 (2008).

 

2.      P. Majhi, H.C. Wen, H.N. Alshareef, H. R. Harris, H. Luan, K. Choi, C. S. Park, S.C. Song, B. H. Lee, and R. Jammy, MICRO Magazine, May (2006).

 

3.      H.N. Alshareef, P. Majhi, M.Quevedo-Lopez, R. Jammy, B.H. Lee, P. Kirsch. “Work Function Engineering Using Interfacial Layers on Hf-Based Gate Dielectrics”, Future Fab International, vol 21, July 01, (2006).

 

4.      H. N. Alshareef, Z. Zhang, P. Majhi, G. Brown, P. Zeitzoff, H. Huff, and B.H. Lee, “Gate Electrode Development for Dual Metal-Gate CMOS Applications”, Future Fab International, 19, 91(2005).

 

5.      A. Karamcheti, V.H.C. Watt, H.N. Alshareef, T.Y. Luo, G.A. Brown, M.D. Jackson, and H.R. Huff, “Silicon Oxynitride Films as a Segue to the High K Era”, Semiconductor Fabtech 12th Ed., 207(2000).

 

 

 

BOOK CHAPTERS

 

1.      M.A. Quevedo and H. N. Alshareef, “Functional Thin Films for Silicon Based Technology”, edited by F. J. Espinoza-Beltrán, Research Signpost Publishers (2010). (ISBN978-81-308-0354-8).

 

2.      D. Dimos, W. L. Warren, and H.N. Alshareef, "Thin Film Ferroelectric Materials and Devices”, edited by R. Ramesh, Kluwer Academic Publishers (Boston, 1997).  ISBN 0-7923-9993-5.

 

3.      H.N. Alshareef and A. I. Kingon, "Ferroelectric Thin Films: Synthesis and Basic Properties", Vol 10, edited by J.F. Scott, C.A. Paz de Araujo, and G. W. Taylor, Gordon and Breach Science Publishers, New York (1996). ISBN 2-88449-189-9.

 

 

 

LIST OF PRESENTATIONS (**denotes invited talk; ***denotes plenary talk)

 

1.      ***H.N. Alshareef, “Flexible Memory Devices Based on Functional Polymers”,   Smart mateials and Surfaces (SMS) Conference, Bangkok, Thailand (August 26-28, 2014).

 

2.      **H.N. Alshareef, “Nanowire Devices Based on p-Type SnO Semiconductors”,   International Colloquium on Photovoltaic & Flexible Electronics (KAUST, Novemebr 2013).

 

3.      H.N. Alshareef, “Thin Film and Nanowire Devices Based on p-Type Transparent Oxide Semiconductors”,   International Conference on Nanomaterials & Technology (ICN+T), AVS sponsored meeting (Vail, Colorado, July 21-25, 2014).

 

4.      **H.N. Alshareef, “Nanomaterial Designed Strategies for Capacitive Energy Storage Applications”,   International Colloquium on Photovoltaic & Flexible Electronics (KAUST, Novemebr 2013).

 

5.      **H.N. Alshareef, “Materials & Devices for Transparent Electronics”, CMOS Emerging Technologies Workshop, Grenoble, France (July 6-9, 2014).

 

6.      **H.N. Alshareef and J.A. Caraveo-Frescas, “SnO Based Thin Film and Nanowire Devices”, 10th International Thin-Film Transistor Conference (scheduled for January 23-24, 2014, Delft, Netherlands)

 

7.      **H.N. Alshareef, “Nanomaterial for Energy Storage Applications”, TMS Annual Meeting, San Diego, USA (February 16, 2013).

 

8.      **S.R. Sarath Kumar and H.N. Alshareef, “Nanostructured Oxide Thin Films & Superlattice Thermoelectrics”, IUMRS, Chennai, India, (December, 2013)

 

9.      **H.N. Alshareef, “High Performance Thin Film and Nanowire Devices Based on p-type Oxide Semiconductors”, Materials Research Society 2013 Fall Meeting (December 2, 2013)

 

10.   **H.N. Alshareef, “Strategies for Improving the Performance of Thermoelectric Oxide Thin Films and Superlattices”, 2013 Pacific Rim (PACRIM) Conference (June 2-7, 2013).

 

11.   A.I.Abu-Taha, Sarath Kumar, and H.N. Alshareef, “Crystal orientation dependent thermoelectric properties of Al doped ZnO films”, presented at the 32nd International Conference on Thermoelectrics, June 30 - July 4, 2013 (Kobe, Japan).

 

12.   ***H.N. Alshareef, “Future Directions in Materials Research”, SABIC Annual Technology Workshop, May 21, 2013 (Riyadh, Saudi Arabia).

 

13.   **H.N. Alshareef, “Nanostructured Electrodes for Efficient Supercapacitors”, American Chemical Society  Meeting (April 8, 2013, New Orleans LA)

 

14.   U. Bhansali and H.N. Alshareef, “All-Polymer, Flexible PEDOT-Based Single Polymer Resistive Memory Device”, Presented at the Materials Research Society Spring Meeting (April 2, 2013)

 

15.   H. Al-Jawhari, J.A. Caraveo-Frescas, and H.N. Alshareef, “Deposition and Characterization of P-type Cu2O Thin Films & Devices”, Fourth International Conference on Transparent Conductive Materials, Greece, October 17-23, 2012

 

16.   A.J. Alfonso-Frescas and H.N. Alshareef, “Fabrication of flexible p-type SnO thin film transistor”, Fourth International Conference on Transparent Conductive Materials, October 17-23, 2012

 

17.   **H.N. Alshareef, “All-Polymer Electronic Memory on Banknotes”, High Security Printing Conference, Dubai September 26, 2012

 

18.   S. Sarath Kumar and H.N. Alshareef, “Thermoelectric Superlattices using NbO Interlayers”, Materials Research Society 2012 Fall Meeting (November 25-December 2, 2012).

 

19.   A. Barasheed S.R. Sarath Kumar, and H.N. Alshareef, “Temperature dependent thermoelectric properties of zinc oxide and gallium doped zinc oxide thin films prepared by Sol-Gel processing”, Materials Research Society 2012 Fall Meeting (November 25-December 2, 2012).

 

20.   Arash Mehdizadeh, Sriparna Bhattacharya, H.N. Alshareef, and T. Tritt, “Large Thermoelectric Power Factor in Pr-doped SrTiO3 Ceramics”, Materials Research Society 2012 Fall Meeting (November 25-December 2, 2012).

 

21.   H.N. Alshareef and Pradipta Nayak, “Effect of Plasma Treatment on the Performance of Ga-doped Zno (GIZO) Thin Film Transistors”, Materials Research Society (MRS-IMRC) Meeting in Cancun, Mexico August 13-13 (2012)

 

22.   H.N. Alshareef, A. Khan, and U. Bhansali, “Polymer Electronics on Banknotes”, Materials Research Society (MRS-IMRC) Meeting in Cancun, Mexico August 13-13 (2012)

 

23.   A.J. Caraveo-Frescas and H.N. Alshareef, “High Mobility p-type SnO on Flexible Substrates”, Materials Research Society (MRS-IMRC) Meeting in Cancun, Mexico August 13-13 (2012)

 

24.   A.J. Caraveo-Frescas and H.N. Alshareef, “Experimental and Theoretical Investigation of the Effect of SiO2 Content in Gate Dielectrics on Flat-Band Voltage Shifts”, presented at Materials Research Society (MRS-IMRC) Meeting in Cancun, Mexico August 13-13 (2012)

 

25.   **H.N. Alshareef, “High Performance Supercapacitors Using Nanostructured Oxides” International Meeting on Integrated Functionalities (ISIF)”, June18-21, 2012, Hong Kong.

 

26.   **H.N. Alshareef, “Chemically Derived Nanostructured Oxides for Energy Storage Applications”, International Meeting on Applications of Ferroelectricity”, scheduled for July18-21, 2012, Aviero Portugal.

 

27.   A. Caraveo-Frescas and H.N. Alshareef, “Optimization of the sputter deposition conditions of Tin Monoxide”, presented at the European Materials Research Society (E-MRS) Meeting, May 14-18 (2012), in Strasbourg, France.

 

28.   **H.N. Alshareef, “Functional Oxides for Sustainable and Smart Living”, International Symposium on Micro and Nanotechnology, Sonora University, Hermosillo, Mexico (Feb 2, 2012).

 

29.   W. Chen, R.B. Rakhi, and H.N. Alshareef, “Supercapacitors on Macroporous Sponge Electrodes”, Materials Research Society Spring Meeting San Francisco, April 9-15, (2012).

 

30.   W. Chen, R.B. Rakhi, and H.N. Alshareef, “Graphene-Oxide Nanocomposite Electrodes for Energy Storage Applications”, Materials Research Society Spring Meeting San Francisco, April 9-15, (2012).

 

31.   R.B. Rakhi, W. Chen, and H.N. Alshareef, “Conducting polymer/carbon Nanocoil composite electrodes for efficient supercapacitors”, oral presentation at the Materials Research Society Spring Meeting, San Francisco, April 9-15, (2012).

 

32.   R.B. Rakhi and H.N. Alshareef, “Ternary Graphene-CNT-MnO2 Electrodes with Remarkable Pseudocapacitance ”, oral presentation at the Materials Research Society Spring Meeting, San Francisco, April 9-15, (2012).

 

33.   Unnat S. Bhansali, M.A. Khan, and H.N. Alshareef, “Inkjet Electrodes for Polymer Ferroelectric Memories on Flexible Substrates”, presented and the Flexible Electronics and Displays Conference”, Pheonix, February 6-9(2012).

 

34.   A. M. Dehkord, S. Bhattacharya, T. Tritt, and H.N. Alshareef, “Transport Properties of La-doped SrTiO3 Thermoelectrics Prepared Using Spark Plasma Sintering”, presented at the American Physical Society Meeting, Boston, MA, February 27- March 2, 2012.

 

35.   **H.N. Alshareef, “Nanomaterials for Energy Storage Applications”, SABIC Energy Summit, Thuwal, Saudi Arabia (Jan. 22, 2011).

 

36.   **H.N. Alshareef, “Nanostructured Electrodes for High Performance Supercapacitor Applications”, invited Seminar at the KFUPM (Nov 15, 2011).

 

37.   **H.N. Alshareef, “Ternary Electrode Composites for Electrochemical Energy Storage”, invited Seminar at UT Dallas (October 5, 2011).

 

38.   **H.N. Alshareef, “Ternary Electrode Composites for Electrochemical Energy Storage”, invited Seminar at the University of Northern Texas (October 5, 2011).

 

39.   **H.N. Alshareef, “Nanostructured Electrodes for High Performance Supercapacitor Applications”, Nanomaterials for Energy Conference, University of Toronto (September 29, 2011).

 

40.   A. Caraveo-Frescas and H.N. Alshareef, “Oriented p-type SnO Thin Films Deposited by Reactive Sputter-Deposition”, presented at the Materials Research Society (MRS-IMRC) Meeting in Cancun, Mexico August 12 (2011).

 

41.   A. Caraveo-Frescas and H.N. Alshareef, “Composition Dependent VFB Tuning Using Rare Earth Oxide Capping Layers”, presented at the Materials Research Society (MRS-IMRC) Meeting in Cancun, Mexico August 13 (2011).

 

42.   S. Kumar and H.N. Alshareef, “Thermoelectric Properties of Nb-Doped Thin Films”, presented at the 30th International Meeting on Thermoelectricity (ICT 2011) in Traverse City, Michigan July 17-21 (2011).

 

43.   S. Kumar, and H.N. Alshareef, “Thermoelectric properties of single-phase In0.2Yb0.2Co4Sb12 thin films”, presented at the 30th International Meeting on Thermoelectricity (ICT 2011) in Traverse City, Michigan July 17-21 (2011).

 

44.   H.N. Alshareef, S. Kumar, A. Alyamani, and T. Tritt, “Thin Film Skutterudite Nanocomposites”, presented at the Materials Research Society (MRS) 2010 Fall Meeting in Boston, Massachusetts (November 28 -December 3, 2010).

 

45.   H.N. Alshareef, “Polymeric Ferroelectric Memory Materials & Devices”, presented at the IMRC-MRS 2010 Meeting in Cancun, Mexico (August, 16, 2010).

 

46.   H. N. Alshareef and M. Alahmad, “Parametric Model for the Optimization of Energy Output of Piezoelectric Cantilevers”, presented at ISIF 2010, San Juan Puerto Rico, June 13-17, 2010.

 

47.   A. Caraveo-Frescas and H.N. Alshareef, “Oriented p-type SnO Thin Films Deposited by Reactive Sputter-Deposition”, presented at the Materials Research Society (MRS-IMRC) Meeting in Cancun, Mexico August 12 (2011).

 

48.   A. Caraveo-Frescas and H.N. Alshareef, “Composition Dependent VFB Tuning Using Rare Earth Oxide Capping Layers”, presented at the Materials Research Society (MRS-IMRC) Meeting in Cancun, Mexico August 13 (2011).

 

49.   S. Kumar and H.N. Alshareef, “Thermoelectric Properties of Nb-Doped Thin Films”, presented at the 30th International Meeting on Thermoelectricity (ICT 2011) in Traverse City, Michigan July 17-21 (2011).

 

50.   S. Kumar, and H.N. Alshareef, “Thermoelectric properties of single-phase In0.2Yb0.2Co4Sb12 thin films”, presented at the 30th International Meeting on Thermoelectricity (ICT 2011) in Traverse City, Michigan July 17-21 (2011).

 

51.   **H.N. Alshareef, “Functional Oxides in Emerging Electronics”, CMOS Emerging Technologies  Conference, Whistler, BC, Canada (June 14-17, 2011).

 

52.   H.N. Alshareef, S. Kumar, A. Alyamani, and T. Tritt, “Thin Film Skutterudite Nanocomposites”, presented at the Materials Research Society (MRS) 2010 Fall Meeting in Boston, Massachusetts (November 28 -December 3, 2010).

 

53.   **H.N. Alshareef, “Micro-power Generation Using Unconventional Sources”, The presented at  Chemindix, The Applications of Nanotechnology in Energy Conference . Bahrain, October 18-22 (2010).

 

54.   **H.N. Alshareef, “Emerging Electronics & Energy Harvesting”, presented at SAUDI ARAMCO (October, 2009).

 

55.   C. Hinkle, J. Chambers, H.N. Alshareef et al., “Metal gate work function tuning by interface engineering”, VLSI Technology Symposium 2010, Hawaii (June 2010).

 

56.   H. N. Alshareef, “Polymeric Ferroelectric Memory Materials & Devices”, presented at the IMRC-MRS 2010 Meeting in Cancun, Mexico (August, 16, 2010).

 

57.   H. N. Alshareef and M. Alahmad, “Parametric Model for the Optimization of Energy Output of Piezoelectric Cantilevers”, presented at ISIF 2010, San Juan Puerto Rico, June 13-17, 2010.

 

58.   **H. N. Alshareef, “Energy Harvesting from Vibrations”, IEEE Local Chapter Meeting, Austin, Texas (April 23, 2009).

 

59.   **M. Quevedo, A. Avendano, H.N. Alshareef, B. Gnade, Sameer Vengopal, and David Allee, presented at the Materials Research Society Meeting, San Francisco, CA (April, 13, 2009).

 

60.   **H. N. Alshareef, “Integrated Hybrid Flexible CMOS Devices and Circuits”, presented at Stanford University, April 11, 2009.   Center for Advanced Molecular Organics.

 

61.   **H. N. Alshareef, “Applications of Functional Oxides in Electronic and Energy Harvesting Devices”, presented at Imperial College, August, 14, 2009.

 

62.   **H.N. Alshareef and B.E. Gnade, Fourth Annual Workshop on Energy Harvesting, Virgina Tech Virginia, January 28-29 (2009).

 

63.   **D.R. Allee, M.A. Quevedo-Lopez, S. Gowrisanker, A. E. Avendano-Bolivar, H.N. Alshareef, B. Gnade S. Venugopal, R. Krishna, K. Kaftanoglu “Flexible CMOS and Electrophoretic Displays” Invited Presentation, Society of Information Display International Symposium (2009).

 

64.   **M. Quevedo, H. N. Alshareef, D. Allee, and B. Gnade, Electrochemical Society Meeting CS (October, 2009), Vienna, Austria.

 

65.   **A. Hande, Pradeep Shah,H. N. Alshareef, Bruce Gnade, “Integrated Energy Harvesting with Multisource, Adaptive Circuits & Interfaces”, Fourth Annual Workshop on Energy Harvesting, Virginia tech, Jan 28-29 (2009).

 

66.   S. Gowrisanker, M.A. Quevedo-Lopez, H. N. Alshareef, B. Gnade. S. Venugopal, R. Krishna, K. Kaftanoglu, D. Allee “Low Temperature Integration of Hybrid CMOS Devices on Plastic Substrates” Proceedings of the 2009 Flexible Electronics and Displays. (presented January, 2009 in Pheonix, Arizona).

 

67.   **H.N. Alshareef, “Energy Harvesting Through the Piezoelectric and Thermoelectric Effects”, 2nd International Conference on Advanced materials, Monclova, Mexico (October, 2008).

 

68.   **H.N. Alshareef, “Energy Harvesting From Vibration” Invited talk at Sematech, Austin, Texas (September, 2008).

 

69.   **H.N. Alshareef, “Metal Gate Electrode Options for Nano Scale Transistors ” Invited talk at Applied Materials Santa Clara, CA (April, 2008).

 

70.   H.N. Alshareef, M. Alahmad, E. Fuentes, L. Baldenegro, M. Quevedo, B. E. Gnade, and “Estimation of The Piezoelectric Constant of Pb(Zr,Ti)O3 Thin Films Using a Simple Capacitive Technique”, presented at the Materials Research Society Meeting, Boston, MA (December 3, 2008).

 

71.   L. Baldenegro, E. Fuentes, M. Quevedo, W. Debray, B. E. Gnade, and H.N. Alshareef, “Characterization of PZT Thin Films on Non-Conducting Surfaces for Energy Harvesting Applications ”, presented at the Materials Research Society Meeting, Boston, MA (December 1, 2008).

 

72.   H.N. Alshareef, “Energy Harvesting through the Piezoelectric Effect”, presented at the University of Texas at Dallas, Dallas, Texas (April 18, 2008).

 

73.   **M.A. Quevedo, H.N. Alshareef, and B. Gnade, “Sensor Materials and Devices”, presented at the Signal Analysis Conference 2008, Pheonix, AZ (March 13, 2008).

 

74.   G. Srinivas, Y. Ai, M. A. Quevedo, H.N. Alshareef, E.Vogel, and B.E. Gnade, “Thickness Effects in Pentacene Organic Thin Film Transistors”, presented at US Display Conference (USDC), Tucson, AZ (Jan. 2008).

 

75.   G. Srinivas, Y. Ai, M. A. Quevedo, H.N. Alshareef, and B.E. Gnade, “Time Dependent Dielectric Breakdown in Parylene Thin Films”, presented at MRS Spring Meeting, March 23-28, 2008 (San Francisco, CA).

 

76.   **H.N. Alshareef, “Flexible Electronics: Materials and Devices”, presented at the International Conference on Advanced Materials, Monclova, Mexico (September 27, 2007).

 

77.   H.C. Wen, S.C. Song, C.S. Park, C. Burham, G. Burseker, M. Quevedo, K. Chio, and H.N. Alshareef, “Metal-Al-Nitride Gate Electrodes for 32 nm CMOS Applications”, presented at the 2007 VLSI Technology Symposium, 160 (2007).

 

78.   **H.N. Alshareef, “Metal Gates for CMOS Applications”, presented at the University of Texas at Dallas, Dallas, TX (April, 2006).

 

79.   H.N. Alshareef, H.R. Harlan, H.C. Wen, P. Majhi, H.F. Luan, K. Choi, B.H. Lee, R. Jammy, “Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric” presented at the VLSI Technology Symposium, Honolulu, Hawai, (June 10, 2006).

 

80.   H. R.Harris, H. N. Alshareef, H.C. Wen, S. Krishnan, K. Choi, H. Luan, D. Heh, C.S. Park, H.B. Park, M. Hussain, B.S. Ju, P.D. Kirsch, S.C. Song, P. Majhi, B.H. Lee, R. Jammy “Simplified Manufacturable Band Edge Metal Gate Solution for NMOS Without a Capping Layer”, presented at the International Electron Device Meeeting, Washington, DC (December, 2006).

 

81.   H. Harris, S. Krishnan, H. C. Wen, H. N. Alshareef, A. Rao, L. Solis, P. Majhi, R. Choi, B. H. Lee, G. Bersuker, and G. A. Brown, "Reliability Characteristics of Metal/High-? PMOS with Top Interface Engineered Band Offset Dielectric (BOD)," presented at the IEEE International Reliability Physics Symposium, Florida (2006).

 

82.   M. El Bouanani, V. Ukirde and H. N. Alshareef, “Cu diffusion in CH4 plasma irradiated Tantalum nitride”, presented at CAARI 2006:19th International Conference on the Application of Accelerators in Research and Industry, Ft Worth TX, (August 21-25) 2006.

 

83.   P. Kirsch, M. A. Quevedo-Lopez, S. A. Krishnan, C. Krug, H. Alshareef, C. S. Park, R. Harris, N. Moumen, A. Neugroschel, G. Bersuker, B .H. Lee, J.G. Wang, G. Pant1, B. E. Gnade, M. J. Kim, R. M. Wallace, J. S. Jur, D. J. Lichtenwalner, A. I. Kingon, and R. Jammy. “Band Edge n-MOSFETs with High-k/Metal Gate Stacks Scaled to EOT=0.9nm with Excellent Carrier Mobility and High Temperature Stability”, presented at the International Electron Device Meeting, Washington, DC (December, 2006).

 

84.   H.C. Wen, K. Choi, C. S. Park, H. Luan, H. N. Alshareef, H. R. Harris H.B. Park, G. Bersuker, P. Lysaght, P. Majhi, S.C. Song and B.H. Lee, “Fermi-level pinning and threshold voltage roll-off phenomena at low effective oxide thicknesses for p-MOS work function metal gates” presented at the 3rd International Symposium on Advanced Gate Stack Technology, Austin, Texas (September 27-29, 2006).

 

85.   M. M. Hussain, S. -. Song, C. Y. Kang, M. A.Quevedo-Lopez, H. N. Alshareef, B. Sassman, R. Choi and B. H. Lee, “Compatibility of ALD Hafnium Silicate with Dual Metal Gate CMOS Integration”, presented at the 2006 Solid State Device Meeting in Yokohama, Japan (2006).

 

86.   M. A. Quevedo-Lopez, P.D. Kirsch, S. Krishnan, H. N. Alshareef, J. Barnett, H. R. Harris, A.Neugroschel, F.S. Aguirre-Tostado, B. E. Gnade, M. J. Kim, R. M. Wallace, and B.H. Lee, “Systematic Gate Stack Optimization to Maximize Mobility with HfSiON EOT Scaling”, presented at the 36th European Solid-State Device research Conference, Montreaux, Switzerland, September 18-22, 2006.

 

87.   H. N. Alshareef, K. Choi, H. C. Wen, H. Harris, H. Luan, P. Lysaght, P. Majhi, and B. H. Lee, "Gate Work Function Modification Using Ultra-Thin Metal Interlayers”, presented at the 207th Electrochemical Society Meeting, Quebec, Canada (September, 2005).

 

88.   K. Choi, Y. Senzaki, H. Luan, H. N. Alshareef, H. Harris, H. Wen, C. Park, P. Majhi, and B. H. Lee, "N-type band edge work function demonstration employing plasma-enhanced ALD HfSiN gate electrodes on high-k dielectrics," presented at AVS 5th International Conference on Atomic Layer Deposition, San Jose, California, 2005.

 

89.   **H.N. Alshareef, “IC Fabrication Tutorial”, presented at the 2nd International Conference on Novel Materials and Devices, Saltillo Institute of Technology, Saltillo, Mexico (April, 2005).

 

90.   H.N. Alshareef, “Composition and Temperature Dependence of the TaAlN Metal Gate Work Function”, presented at the Semiconductor Interface Specialist Conference (SISC), Washington, DC, (December, 2005).

 

91.   **H.N. Alshareef, “Work Function Exraction Using a Terraced Oxide Technique”, presented at 2nd International Workshop on Advanced Gate Stack Technology, in Austin, TX (September  28-30, 2005).

 

92.   **H.N. Alshareef, “Status of Metal Gate Material Development for CMOS Applications”, presented at Philips Research, Grenoble, France, (September, 2005).

 

93.   **H.N. Alshareef, “Status of Metal Gate Material Development for CMOS Applications”, presented at Infineon technology, Dressden, Germany (September, 2005).

 

94.   H.N. Alshareef and P. Majhi, “Atomic Layer Deposition of TaN Metal Gate Electrodes”, presented at the 2005 International Conference on Atomic Layer Deposition, Helsinki, Finland  (July, 2005)

 

95.   Y. Senzaki, J. Gutt, G. A. Brown, P. Kirsch, H. N. Alshareef, K. Choi, C. Huffman, H. Wen, P. Majhi, B. H. Lee, H. Chatham, S. Park, and S. Lanee, "ALD of Advanced High-k and Metal Gate Stacks for MOS Devices," presented at 207th ECS Meeting, Quebec, Canada, 2005.

 

96.   D. Rogers, T. Laaksonen,  A. Varghese, C. Otten, M. Kasner, H. N. Alshareef, M. Bevan, “In-Line Control and Rapid Process Development of Nitrided Gate Oxides” , presented at the CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005, Dallas, Texas (2005).

 

97.   S. C. Song, B. Lee, Z. Zhang, K. Choi, S. H. Bae, H.N. Alshareef, P. Majhi, H. Wen, J. Bennett, B. Sassman, and P. Zeitzoff, "Comparision of MOSFET Characteristics Between ALD and MOCVD TiN Metal Gate on Hf Silicate," presented at the 207th Meeting of the Electrochemical Society, Quebec, Canada (September, 2005).

 

98.   H. R. Harris, H. C. Wen, K. Choi, H.N. Alshareef, H. Luan, Y. Senzaki, C. D. Young, S. C. Song, Z. Zhang, G. Bersuker, P. Majhi, and B. H. Lee, "Demonstration of high performance transistors with PVD metal gate," presented at the European Solid-State Device Research Conference, Switzerland, 2005.

 

99.   K. Choi, Y. Senzaki, H. Luan, H. N. Alshareef, H. Harris, H. Wen, C. Park, P. Majhi, and B. H. Lee, "N-type band edge work function demonstration employing plasma-enhanced ALD HfSiN gate electrodes on high-k dielectrics," presented at AVS 5th International Conference on Atomic Layer Deposition, San Jose, California, 2005.

 

100. H. C. Wen, K. Choi, P. Lysaght, P. Majhi, H. N. Alshareef, C. Huffman, R. Harris, H. Luan, B. H. Lee, N. Yamada, and S. Wickramanayaka, "Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS," presented at the Taiwan VLSI Technology Symposium, Taipei, Taiwan (2005).

 

101. K. Choi, Y. Senzaki, H. Luan, H. N. Alshareef, H. Harris, H. Wen, C. Park, P. Majhi, and B. H. Lee, "N-type band edge work function demonstration employing plasma-enhanced ALD HfSiN gate electrodes on high-k dielectrics," presented at AVS 5th International Conference on Atomic Layer Deposition, San Jose, California, (2005).

 

102. H. C. Wen, K. Choi, P. Lysaght, P. Majhi, H. N. Alshareef, C. Huffman, R. Harris, H. Luan, B. H. Lee, N. Yamada, and S. Wickramanayaka, "Work function engineering of RuHf alloys as gate electrodes for future generation dual metal CMOS," presented at the Taiwan VLSI Technology Symposium, Taipei, Taiwan (2005).

 

103. Z. Zhang, S.C. Song, C. Huffman, J. Barnett, N. Moumen, H.N. Alshareef, P. Majhi, M. Hussain, M. Akbar, J.Sim, S. Bae, B. Sassman, and B.H. Lee, “Integration of Dual Metal gate CMOS Using TaSiN and Ru Metal Gates”, presented at the 2005 VLSI Technology Symposium, Japan (2005).

 

104. P. S. Lysaght, H.-C. Wen, H. N. Alshareef, K. Choi, R. Harris, H. Luan, Y. Senzaki, G. Lian, M. Campin, M. Clark, B. Foran, P. Majhi, and B.-H. Lee, "Physical Characterization of Novel Metal Electrodes for Hf-based Transistors," presented at the CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005 Conference, Dallas, TX (September 9, 2005).

 

105. P. Majhi, H. C. Wen, H. N. Alshareef, K. Choi, R. Harris, P. Lysaght, H. Luan, Y. Senzaki, S. C. Song, B. H. Lee, and C. Ramiller, "Evaluation and integration of metal gate electrodes for future generation dual metal CMOS," presented at the IEEE International Conference on Integrated Circuit  Technology, Shanghai, China (2005).

 

106. K. Choi, H.-C. Wen, H. N. Alshareef, R. Harris, P. Lysaght, H. Luan, P. Majhi, and B. H. Lee, "The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode," presented at the European Solid-State Device Research Conference, (2005).

 

107. K. Choi, P. Lysaght, H.-C. Wen, K. Matthews, H. N. Alshareef, C. Huffman, R. Harris, H. Luan, P. Majhi, and B. H. Lee, "Growth mechanism of ALD-TiN and the thickness dependence of work function," presented at the Taiwan VLSI Technology Symposium, Taipei, Taiwan (2005).

 

108. H. C. Wen, H. N. Alshareef, H. Luan, K. Choi, P. Lysaght, H. R. Harris, C. Huffman, G. A. Brown, G. Bersuker, P. Zeitzoff, H. Huff, P. Majhi, and B. H. Lee, "Systematic investigation of amorphous transition-metal-silicon-nitride electrodes for metal gate CMOS applications," presented at the VLSI Technology Symposium in Japan, (2005).

 

109. P. Majhi, H.C. Wen, H. N. Alshareef, K. Choi, H.F. Luan, and B.H. Lee, presented at the Taiwan VLSI Technology Symposium, Taipei, Taiwan (2005).

 

110. H. N. Alshareef, K. Choi, H.C. Wen, R. Harris, H.F. Luan, M. Quevedo-Lopez, P.Majhi, and B.H. Lee, “Process-Induced Work Function Modulations of TaxAl1-xNy Metal Gate Electrodes”, presented at the 2005 IEEE Semiconductor Interface Specialist (SISC) Conference, Washington DC (December, 2005).

 

111. **H. N. Alshareef, “Current Challenges in Front-End Processes in CMOS Device Fabrication”, presented at the Universidad de Coahuila,  Saltillo, Coahuila, Mexico (Nov 12, 2004).

 

112. H. N. Alshareef, T.Y. Lou, A. Karamcheti, V.H.C Watt, G.A. Brown, M.D. Jackson, H.R. Huff, B. Evans, and D.L. Kwong, “High Performance NMOS Devices Using Ultra-thin VHP Oxynitride”, presented at the 2000 Solid State Device Meeting in Sendai, Japan (September, 2000).

 

113. T.Y. Lou, H. N. Alshareef, G.A. Brown, M. Laughery, V.H.C. Watt, A. Karamcheti, M.D. Jackson, and H.R. Huff, “Prospective Technology for System-on-a-Chip: N2 Implant Followed by VHP O2 Re-Oxidation”, presented at the SPIE Meeting, California (2000).

 

114. H. N. Alshareef, T.Y. Luo, A. Karamcheti, G.A. Brown, M. Laughery, V. Watt, M.D. Jackson, H.R. Huff, K. Ahmad, R. Jallepally, D. Noble, N. Tam, and G. Miner, “Gate Dielectrics Formed by Remote Plasma Nitridation of In-Situ Steam Generated (ISSG) Oxides”  presented at the the 198th Electrochemical Society  Meeting,Toronto, Canada (October, 2000).

 

115. P.Y. Hung, G.A. Brown, X. Zhang, J. Bennett, H. N Alshareef, C. Young, C. Oroshiba, A. Diebold, ”Metrology Study of Sub 20Å Oxynitride by Corona-Oxide-Silicon (COS) and Conventional C-V Approaches,”  presented at the Spring Meeting of the Materials Research Society, San Francisco, CA (2002).

 

116. Veloso, M. Jurczak, F. N. Cubaynes, R. Rooyackers, S. Mertens, A. Rothschild,M. Schaekers, H. N. Alshareef, R. W. Murto, C. J. Dachs, “RPN Oxynitride Gate Dielectrics for 90 nm Low Power CMOS Applications”  presented at the European Solid State Device Research Conference, (2002).

 

117. F. N. Cubaynes, C.J Dachs, C. Detcheverry, A. Zegers, V.C. Venezia, J. Schmitz,P.A. Stolk, M. Jurczak, K. Henson, R. Degraeve, A. Rothschild, T. Conard, J.Petry, M. Da Rold, M. Schaekers, G. Badenes, L. Date, D. Pique, H. N. Alshareef, R.W. Murto, “Gate Dielectrics for High Performance and Low Power SoC CMOS” Applications”, presented at the European Solid State Device Research Conference, (2002).

 

118. B. Hoerning, R. Khamankar, H. Niimi, M. Goodwin, L. Robertson, D. Miles, B. Kirkpatrick, H. N. AIshareef, A. Varghese, M. Bevan, P. Nicollian, P R. Chidambaram, S. Chakravarthi, A. Gurba, X. Zhang, I. Blatchford, B. Smith, J.P. Lu, J. Deloach, B. Rathsack, C. Bowen, G. Thakar, C. Machala and T. Grider et al. “A High Performance 90 nm Technology With 37 nm Gate Length,” presented at the VLSI Technology Symposium Meeting, Japan (2003).

 

119. H. C. Wen, P. Lysaght, M. J. Campin, B. Foran, C. Huffman, H. N. Alshareef, K. Choi, and P. Majhi, "Thermal Response of Ru Electrodes in Contact with SiO2 and HfSiOx Gate Dielectrics," presented at the Fall Meeting of the Materials Research Society, Boston, MA, (2004).

 

120. B.H. Lee, C.D. Young, R. Choi, J.H. Sim, G. Bersuker, C.Y. Kang, R. Harris, G.A. Brown, K. Matthews, S.C. Song, N. Moumen, J. Barnett, P. Lysaght, K.S. Choi, H.C. Wen, C. Huffman, H. N. Alshareef, P. Majhi, S. Gopalan, J. Peterson, P. Kirsh, H.-J. Li, J. Gutt, M. Gardner, H.R. Huff, P. Zeizoff, R. Murto, L. Larson, C. Ramiller, presented at the International Electron Device Meeting, December (2004).

 

121. R. Khamankar, H. Bu, S. Chakravarthi, P. Chidambaram, M. Bevan, A. Krishnan, H. Niimi, B. Smith, J. Blatchford, B. Hornung, J. P. Lu, P. Nicollian, B. Kirkpatrick, D. Miles, D. Farber, H. N. Alshareef, A. Varghese, A. Gurba,  et al. “An Enhanced 90 nm Technology Node with Strong Performance Improvement from Stress and Mobility Increase”, presented at the 2004 VLSI Technology Symposium”, Hawaii (2004).

 

122. **H. N. Alshareef, D. Dimos, T.J. Boyle, W.L. Warren, and B.A. Tuttle, "A Model for the Optical and Electrical Polarization Fatigue of SrBi2Ta2O9", presented at the International Meeting on Integrated Ferroelectrics, Santa Fe, NM (2007).

 

123. R.P.S. Thakur, S.J. Deboer, H. N. Alshareef, and D.Gealy, "Advanced DRAM Capacitors Using Tantalum Pentoxide Process Technology", presented at the   195th Electrochemical Society Meeting (May, 1997).

 

124. D.B. Dimos, S.J. Lockwood, T.J. Garino, H.N. Alshareef, and R.W. Schwartz, "Integrated Decoupling Capacitors using Pb(Zr,Ti)O3 Thin Films", presented at the Spring Meeting of the Materials Research Society, San Francisco, CA (1996).

 

125. W.L. Warren, B.A. Tuttle, D. Dimos H. N. Alshareef, R. Ramesh, and J.T. Evans, "Voltage Shifts and Defect Dipoles in Ferroelectric Capacitors", presented at the Spring Meeting of the Materials Research Society, San Francisco, CA (1996).

 

126. M.V. Raymond, H. N. Alshareef, B.A. Tuttle, and D. Dimos, "RF Magnetron Sputter-Deposition of La1-xSrxCoO3/Pt Composite Electrodes", presented at the Spring Meeting of the Materials Research Society, San Francisco, CA (1996).

 

127. H. N. Alshareef and D. Dimos , "Accelerated Life-Time Testing and Resistance Degradation of Thin Film Decoupling Capacitors", presented at the 10th International Meeting on the Applications of Ferroelectricity (ISAF) (1996).

 

128. X. Chen, A. I. Kingon, H. N. Alshareef, K.R. Bellur, K.D. Gifford, and O. Auciello, "Leakage and Interface Engineering in Titanate Thin Films for Nonvolatile Memory Applications", presented at the 6th Internatioanl Symposium on Integrated Ferroelectrics, Colorado Springs, Co (1995).

 

129. H. N. Alshareef, K.R. Bellur, O. Auciello, and A. I. Kingon, "Electrical Properties of Pb(Zr,Ti)O3 with Modified RuO2 Bottom Electrodes", presented at the 6th Internatioanl Symposium on Integrated Ferroelectrics, Colorado Springs, Co (1995).

 

130. H. N. Alshareef, Y.L. Chen, O. Auciello, and A. I. Kingon, "Microstructural and Electrical Properties of Ferroelectric Capacitors with Pt/RuO2 Hybrid Electrodes", presented at the Fall meeting of the Materials Research Society Meeting, Boston, MA (1995).

 

131. H. N. Alshareef, K. R. Bellur, O. Auciello, and A. I. Kingon, " Effect of RuO2 Electrodes on the Microstructure and Phase Evolution of  Pb(Zr,Ti)O3 Thin Films", presented at the International Meeting on Ferroelectrics, Gaithersburg, Maryland (1994).

 

132. H. N. Alshareef, K. D. Gifford, P.D. Hren, O. Auciello, and A. I. Kingon, "Bottom Electrodes for PZT Thin Films", presented at the 4th International Symposium on Integrated Ferroelectrics in Colorado Springs, Co  (1993).

 

133. K.D. Gifford, H.N. Alshareef, S. H. Rou, K.D. Gifford, O. Auciello, and A. I. Kingon, "Microstructure and Electrical Properties of PZT Thin Films Deposited by in-situ Ion Beam Sputtering", presented at the Spring Meeting of the Materials Research Society, San Francisco, CA (April, 1992).

 

134. P.D. Hren, S.H. Rou, H. N. Alshareef, M.S. Ameen, O. Auciello, and A. I. Kingon, "Bottom Electrodes for Integrated Pb(Zr,Ti)O3 Films", presented at the 3rd International Symposium on Integrated Ferroelectrics in Colorado Springs, Co (1992).

 

135. P.D. Hren, H. N. Alshareef, S.H. Rou, and A. I. Kingon, E.A. Irene, "Hillock Formation in Platinum Films", presented at the Spring Meeting of the Materials Research Society, San Francisco, CA (April, 1992).

 

136. H.N. Alshareef, K. R. Bellur, S. H. Rou, and A. I. Kingon, "Electrical Characterization of Sol-Gel Derived PZT Thin Films", presented at the Eighth International Meeting on the Applications of Ferroelectricity (ISAF), Clemson, South Carolina (1992).

 

137. M.S. Ameen , T.M. Graettinger, S.H. Rou,  H.N. Alshareef, K.D.Gifford, O. Auciello, and A. I. Kingon, "Processing and Structural Characterization of Ferroelectric Thin Films Deposited by Ion Beam Sputtering", presented at the Fall Meeting of the Materials Research Society, Boston, MA (December, 1991).

 

138. T.M. Graettinger, O. Auciello, M.S. Ameen, H.N. Alshareef, K.D.Gifford, O. Auciello, and A. I. Kingon, "Ion Beam Sputtering of  Ferroelectric Oxide Thin Films", presented at the Fall Meeting of the Materials Research Society, Boston,

 

 

 

PATENTS

 

1.      M. Almadhoun and H.N. Alshareef,  (12T&I0026-US-PSP), "High performance all-organic nanocomposites with giant dielectric permittivity, low dielectric loss, and low percolation threshold" filed at the US Patent Office on 09-10-2012 as Serial Number 61/711279

 

2.      U. Bhansal, M.A. Khan, and H.N. Alshareef, (12T&I0025-US-PSP), "Solution-processed flexible and transparent resistive WORM memory fabricated from a single polymer material i.e. Poly(3,4-ethylenedioxythiophene): poly(styrene sulfonic acid) [PEDOT:PSS]" was filed at the Patent Office on 09-10-2012 as Serial Number 61/711281.

 

3.      M.A. Khan U. Bhansal, , and H.N. Alshareef (12T&I0018-US-PSP[2]), "FERROELECTRIC DEVICES, INTERCONNECTS, AND METHODS OF MANUFACTURE THEREOF " was filed at the Patent Office on 26-09-2012 as Serial Number 61/705782.

 

4.      Unnat Bhansali, M. Khan, and H.N. Alshareef, “Polymeric Global Interconnects for Flexible Electronics Applications”, filed June, 2012.

 

5.      M.A. Khan and H.N. Alshareef, “Single Material Flexible Memory Device”, disclosed May 2012. Patent application in preparation.

 

6.      US patent no. 7906441, “System and method to mitigate oxide growth in a gate dielectric”, issued 2011.

 

7.      US patent no. 7682988, “Thermal treatment of nitride oxide to improve negative bias thermal instability”, issued 2010.

 

8.      US patent no. 7514308, “CMOS device having different amounts of nitrogen in the nmos and pmos dielectric layer”, issued 2009.

 

9.      US patent no. 7582571, “Dual Metal Gates for 3-D field effect transistor (MUGFET)”, issued 2009.

 

10.   US patent no. 7345001, “Gate dielectric having flat nitrogen profile and method of manufacture therefore”, issued 2008.

 

11.   US patent no. 7402524, “Post high voltage gate oxide pattern, high vacuum surface outgas treatment”, issued 2008.

 

12.   US patent no. 7227201, “CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers”.  Issued 2007.

 

13.   US patent no. 7226826, “Semiconductor device having multiple work functions and method of manufacture therefore”.  Issued 2007.

 

14.   US patent no. 7206215, “Antifuse having tantalum oxynitride film and method for making same”.  Issued 2007.

 

15.   US patent no. 7176079, “Method of fabricating a semiconductor device with a wet oxidation with steam process”.  Issued 2007.

 

16.   US patent no. 7087440, “Monitoring of nitrided oxide gate dielectrics by determination of a wet etch rate”.  Issued 2007.

 

17.   US patent no. 7064052, “Monitoring Method of processing a transistor gate dielectric film with steam”.  Issued 2006.

 

18.   US patent no. 7049242, “Post high voltage gate dielectric pattern plasma surface treatment”.  Issued 2006.

 

19.   US patent no. 7038265, “Capacitor having tantalum oxynitride film and method for making same”.  Issued 2006.

 

20.   US patent no. 7022623, “Method of fabricating a semiconductor device with a dielectric film using a wet oxidation with steam process”.  Issued 2006.

 

21.   US patent no. 7018925, “Monitoring Post high voltage gate oxide pattern high-vacuum outgas surface treatment”.  Issued 2006.

 

22.   US patent no. 6955996, “Method for stabilizing high pressure oxidation of a semiconductor device”.  Issued 2005.

 

23.   US patent no. 6949477, “Method of fabricating a capacitive element for a semiconductor device”.  Issued 2005.

 

24.   US patent no. 6943392, “Capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen”.  Issued 2005.

 

25.   US patent no. 6924239, “Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using "spike" radical oxidation”.  Issued 2005.

 

26.   US patent no. 6921703, “System and method for mitigating oxide growth in a gate dielectric”.  Issued 2005.

 

27.   US patent no. 6872639, “Fabrication of semiconductor devices with transition metal boride films as diffusion barriers”.  Issued 2005.

 

28.   US patent no. 6864527, “Capacitor having tantalum oxynitride film and method for making same”.  Issued 2005.

 

29.   US patent no. 6773981, “Methods of forming capacitors”.  Issued 2004.

 

30.   US patent no. 6737696, “DRAM capacitor formulation using a double-sided electrode”.  Issued 2004.

 

31.   US patent no. 6730566, “Method for non-thermally nitrided gate formation for high voltage devices”.  Issued 2004.

 

32.   US patent no. 6720607, “Method for improving the resistance degradation of thin film capacitors”.  Issued 2004.

 

33.   US patent no. 6673689, “Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials”.  Issued 2004.

 

34.   US patent no. 6635547, “DRAM capacitor formulation using a double-sided electrode”.  Issued 2003.

 

35.   US patent no. 6614082, “Fabrication of semiconductor devices with transition metal boride films as diffusion barriers”.  Issued 2003.

 

36.   US patent no. 6610211, “Method of processing internal surfaces of a chemical vapor deposition reactor”.  Issued 2003.

 

37.   US patent no. 6596651, “Method for stabilizing high pressure oxidation of a semiconductor device”.  Issued 2003.

 

38.   US patent no. 6518121, “Boride electrodes and barriers for cell dielectrics”.  Issued 2003.

 

39.   US patent no. 6458645, “Capacitor having tantalum oxynitride film and method for making same”.  Issued 2002.

 

40.   US patent no. 6451661, “DRAM capacitor formulation using a double-sided electrode”.  Issued 2002.

 

41.   US patent no. 6423649, “Method and apparatus for stabilizing high pressure oxidation of a semiconductor device”.  Issued 2002.

 

42.   US patent no. 6400552, “Capacitor with conductively doped Si-Ge alloy electrode”.  Issued 2002.

 

43.   US patent no. 6399459, “Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same”.  Issued 2002.

 

44.   US patent no. 6351005, “Integrated capacitor incorporating high K dielectric”.  Issued 2002.

 

45.   US patent no. 6316800, “Boride electrodes and barriers for cell dielectrics”.  Issued 2001.

 

46.   US patent no. 6291364, “Method and apparatus for stabilizing high pressure oxidation of a semiconductor device”.  Issued 2001.

 

47.   US patent no. 6281543, “Double layer electrode and barrier system on hemispherical grain silicon for use with high dielectric constant materials and methods for fabricating the same”.  Issued 2001.

 

48.   US patent no. 6258655, “Method for improving the resistance degradation of thin film capacitors”.  Issued 2001.

 

49.   US patent no. 6255186, “Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom”.  Issued 2001.

 

50.   US patent no. 6239459, “Capacitors, methods of forming capacitors and integrated circuitry”.  Issued 2001.

 

51.   US patent no. 6162744, “Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers”.  Issued 2000.

 

52.   US patent no. 6124164, “Method of making integrated capacitor incorporating high K dielectric”.  Issued 2000.

 

53.   US patent no. 6096127, “Tunable dielectric films having low electrical losses”.  Issued 2000.

 

54.   US patent no. 6082375, “Method of processing internal surfaces of a chemical vapor deposition reactor”.  Issued 2000.

 

55.   US patent no. 5555486, “Hybrid metal/metal oxide electrodes for ferroelectric capacitors”.  Issued 2000.

 

 ​

 
​​​​​